2002
DOI: 10.1023/a:1020892721493
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Cited by 8 publications
(1 citation statement)
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“…In order to eliminate the voltage discontinuity at MOS gate terminals, the transistor gate opens were distinctively modeled by connecting a large 10-MΩ resistor to gate and disconnecting terminals with respect to the system ground. In the case of parametric faults, the component variation was realized where the practical component variations are in an extensive range from 10% to 50% [19][20]. In summary, the total number of 54 faults was investigated, including 13 faults in the linear RC network and 41 faults in the unity-gain buffer.…”
Section: Preliminary Evaluations Of Fault Influencesmentioning
confidence: 99%
“…In order to eliminate the voltage discontinuity at MOS gate terminals, the transistor gate opens were distinctively modeled by connecting a large 10-MΩ resistor to gate and disconnecting terminals with respect to the system ground. In the case of parametric faults, the component variation was realized where the practical component variations are in an extensive range from 10% to 50% [19][20]. In summary, the total number of 54 faults was investigated, including 13 faults in the linear RC network and 41 faults in the unity-gain buffer.…”
Section: Preliminary Evaluations Of Fault Influencesmentioning
confidence: 99%