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d’Agostino, Riccardo; Colaprico, V.; Favia, Pietro; Fracassi, Francesco; Lamendola, R.

doi:10.1023/a:1021891212989

Cited by 18 publications

(22 citation statements)

References 38 publications

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“…Although, we do not have enough evidence to propose a complete mechanism to account for the formation of the SiO 2 thin films, in line with the previous results by Jauberteau 25 and other authors, 9,10 it is reasonable to assume that the formation of the oxide film from TMSCl is a process that involves the adsorption on the substrate of either the precursor molecule or some reactive fragments resulting from its activation and eventual fragmentation. On the surface, the competition between the polymerization of these fragments to yield SiO x C y H z polymeric chains and the oxidation or etching of organic fragments of these films leading to the removal of organic components will control the formation of SiuO bonds.…”

Section: Plasma-enhanced Chemical Vapor Deposition Thin-film Formasupporting

confidence: 83%

“…There are some advantages in using organosilicon precursors, such as their safer handling, the fact that they yield a better step coverage, and the possibility to prepare inorganic SiO 2 as well as polymeric SiO x C y H z thin films, depending on the dilution degree of the precursor in the oxidizing gas. 9,10 More recently, the use of TMS for preparing SiO 2 thin films by PECVD has been introduced because the films deposited with TMSϩO 2 mixtures produce better water repellent layers than thin films deposited by using an ethoxide-like tetramethoxysilaneϩO 2 . 11 Other authors have also shown that by using TMSϩO 2 , it is possible to deposit hydrophobic SiO x thin films in a corona discharge plasma at atmospheric pressure.…”

Section: Introductionmentioning

confidence: 99%

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Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Barranco

Cotrino

Yubero

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Silicon dioxide thin films have been prepared at room temperature by remote plasma-enhanced chemical vapor deposition in a downstream reactor by using Si(CH 3 ) 3 Cl as a volatile precursor and a microwave electron cyclotron resonance external source. Experiments are done at constant pressure by changing the relative amount of Ar species R in the plasma gas. The aim was to obtain thin films with low density and, therefore, low refractive index. Characterization of the species of the plasma is carried out by optical emission spectroscopy. The changes of the plasma conditions are correlated with the growing rate and microstructure of the films, the latter determined by atomic force microscopy and infrared spectroscopy. It is found that the growing rate of the films decreases and their roughness increases as R increases. The optical properties of SiO 2 thin films are analyzed by optical ellipsometry. A decrease in the refractive index is found for the films grown with high values of R. The possible routes for activation of the precursor and the formation of the SiO 2 thin films are discussed.

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Section: Plasma-enhanced Chemical Vapor Deposition Thin-film Formasupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Plasma-enhanced chemical vapor deposition of SiO2 from a Si(CH3)3Cl precursor and mixtures Ar/O2 as plasma gas

Barranco

Cotrino

Yubero

et al. 2003

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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“…The increase of the contact angle values after plasma processing showed surfaces similar to PTFE (polytetrafluoroethylene -angle 110°) [13] . However, there weren't significant differences at 95% confidence at the process conditions investigated.…”

Section: Resultsmentioning

confidence: 98%

Effect of plasma fluorination variables on the deposition and growth of partially fluorinated polymer over PMMA films

Padilha¹,

Giacon²,

Bartoli³

2013

Polímeros

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Abstract:In this work, an investigation was made of the modification of film surface of Poly(methylmethacrylate) (PMMA) using the plasma polymerization technique. PMMA films 10 µm thick were obtained by Spin-Coating starting from a chloroform solution (15.36% w/w). The films were exposed to the plasma of CHF 3 at different gas pressures and exposure times to increase the thickness of fluorinated polymers onto PMMA films. The plasma fluorinated optical films were characterized by gravimetry, FTIR-ATR, contact angle of wetting, SEM and AFM. The surface fluorination of PMMA films can be inferred by the increase in contact angle under all experimental conditions, and confirmed with FTIR-ATR analysis. Gravimetry showed an increase of the fluorinated polymer layer over PMMA films, being 1.55 µm thick at 0.7 torr and 40 minutes of plasma exposure. The SEM analysis showed a well-defined layer of fluorinated polymer, with fluorine being detected in the EDS analysis. The film roughness for the fluorinated polymers was around of 200 Å, quite satisfactory for a 1.55 µm cladding.

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“…Actinometric state of carbon atoms in amorphous hydrogenated optical emission spectroscopy (AOES), first sugcarbon films, increasing the sp 2 fraction and regested by Coburn and Chen 4,5 and used extenducing internal stress. 1 The surface roughness 2 sively by other groups to characterize film-deposand the optical gap 3 of such films are also found iting plasmas containing fluorine, [6][7][8] oxygen, 9 nito be dependent on the degree of nitrogenation.…”

Section: Introductionmentioning

confidence: 96%