Some results obtained during the etching of Si or the deposition of fluorocarbon films over Si substrates uncoupled from ground in rf plasmas fed with CF4–H2, C2F6–H2, C3F8–H2 and CF4–C2F4 mixtures are presented. The polymerization process is explained on the basis of a mechanism which involves CF and/or CF2 radicals as building blocks as well as an activation of the polymer surface by means of charged particle bombardment. It is definitively proved that the etch rate of Si depends only on the F-atom concentration, independent of conditions in the various feeds.
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