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Yatsui, Kiyoshi

doi:10.1023/a:1006699625013

“…Using this method, the thin film which features few droplets and has a smooth surface has been prepared. [9][10][11][12] Furthermore, we have placed the substrate facing the BS and attempted to prepare the thin film. This substrate position has been called mask-side (MS) configuration.…”

Section: Introductionmentioning

confidence: 99%

Study of transitions in thulium atoms in the 410–420-nm range for laser cooling

Акимов

¹

,

Chebakov

²

,

Tolstikhina

³

et al. 2008

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Boron carbide (B 4 C) is known as a material having hardness, wear resistance and stability at high temperature. The preparation of thin films of B 4 C, therefore, is very important from the viewpoint of industrial applications. We have experimentally attempted to prepare thin films of B 4 C using the pulsed ion-beam evaporation (IBE) technique, where high-density ablation plasma is produced by an intense pulsed ion beam interaction with the target. The crystallized B 4 C thin films have been successfully deposited on a Si (100) substrate by front-side and mask-side deposition. Absorptions associated with the B-C combination and the vibration of B 12 -B 12 clusters have been observed by Fourier transform infrared spectroscopy. The Vickers hardness of the film deposited by front-side deposition is observed to be HV ∼ 2300.

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“…[6][7][8][9][10][11][12] The solid target is irradiated by an intense pulsed light ion beam (LIB), 11,13,14) to produce high-temperature, high-density ablation plasma. The plume is deposited on the substrate.…”

Section: Introductionmentioning

confidence: 99%

Preparation of B₄C Thin Film by Intense Pulsed Ion-Beam Evaporation

Kitajima

¹

,

Suzuki

²

,

Jiang

³

et al. 2001

Jpn. J. Appl. Phys.

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Boron carbide (B 4 C) is known as a material having hardness, wear resistance and stability at high temperature. The preparation of thin films of B 4 C, therefore, is very important from the viewpoint of industrial applications. We have experimentally attempted to prepare thin films of B 4 C using the pulsed ion-beam evaporation (IBE) technique, where high-density ablation plasma is produced by an intense pulsed ion beam interaction with the target. The crystallized B 4 C thin films have been successfully deposited on a Si (100) substrate by front-side and mask-side deposition. Absorptions associated with the B-C combination and the vibration of B 12 -B 12 clusters have been observed by Fourier transform infrared spectroscopy. The Vickers hardness of the film deposited by front-side deposition is observed to be HV ∼ 2300.

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Numerical and experimental studies on synthesis of ultrafine nanosize powders of AlN by ion beam evaporation

Zhu

¹

,

Jiang

²

,

Yatsui

³

1999

Journal of Applied Physics

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Synthesis of ultrafine nanosize powders by ion beam evaporation (IBE) has been studied numerically and experimentally. Theoretical models have been developed, which involve such physical processes as beam-target interaction, plasma expansion, and the synthesis of powders. The macroscopic properties of the ultrafine powders have been predicted. As an application of our models, the macroscopic properties of AlN powders synthesized by IBE with an AlN target have been predicted. The energy density, pulse width, and spot size of the ion beam are 20 J/cm2, 70 ns, and 1 cm2, respectively. The main results have shown that the particle size distribution is log normal and that 70% of all particles exist between 20 and 40 nm. The average diameter and the specific surface area are ∼30 nm and ∼50 m2/g, respectively. Experimentally, the ultrafine AlN powders have been successfully synthesized by IBE, which has been verified by x-ray diffraction and transmission electron diffraction. Furthermore, particle size distributions have been obtained by transmission electron microscopy. The experimental results are found to be in a reasonable agreement with the numerical studies.

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Cited by 8 publications

References 14 publications

Study of transitions in thulium atoms in the 410–420-nm range for laser cooling

Study of transitions in thulium atoms in the 410–420-nm range for laser cooling

Preparation of B₄C Thin Film by Intense Pulsed Ion-Beam Evaporation

Numerical and experimental studies on synthesis of ultrafine nanosize powders of AlN by ion beam evaporation

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Untitled

Cited by 8 publications

References 14 publications

Study of transitions in thulium atoms in the 410–420-nm range for laser cooling

Study of transitions in thulium atoms in the 410–420-nm range for laser cooling

Preparation of B4C Thin Film by Intense Pulsed Ion-Beam Evaporation

Numerical and experimental studies on synthesis of ultrafine nanosize powders of AlN by ion beam evaporation

Contact Info

Product

Resources

About

Preparation of B₄C Thin Film by Intense Pulsed Ion-Beam Evaporation