2001
DOI: 10.1143/jjap.40.1030
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Preparation of B4C Thin Film by Intense Pulsed Ion-Beam Evaporation

Abstract: Boron carbide (B 4 C) is known as a material having hardness, wear resistance and stability at high temperature. The preparation of thin films of B 4 C, therefore, is very important from the viewpoint of industrial applications. We have experimentally attempted to prepare thin films of B 4 C using the pulsed ion-beam evaporation (IBE) technique, where high-density ablation plasma is produced by an intense pulsed ion beam interaction with the target. The crystallized B 4 C thin films have been successfully depo… Show more

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Cited by 20 publications
(3 citation statements)
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“…Although some attempts for realizing crystalline films have been done with pulsed laser deposition (PLD) and magnetron sputtering technique and so on, crystallized boron-carbide thin films had never been obtained without substrate heating during deposition and post annealing [4]. However, it is already reported that intense pulsed-ion beam evaporation (IBE) method enables us to deposit crystallized boron-carbide thin films without substrate heating and post annealing [5]. IBE is newly developed high-speed thin film deposition process [6,7].…”
Section: Introductionmentioning
confidence: 99%
“…Although some attempts for realizing crystalline films have been done with pulsed laser deposition (PLD) and magnetron sputtering technique and so on, crystallized boron-carbide thin films had never been obtained without substrate heating during deposition and post annealing [4]. However, it is already reported that intense pulsed-ion beam evaporation (IBE) method enables us to deposit crystallized boron-carbide thin films without substrate heating and post annealing [5]. IBE is newly developed high-speed thin film deposition process [6,7].…”
Section: Introductionmentioning
confidence: 99%
“…The Vickers hardness of the deposit measured in the cross-sectional sample averaged 2600 kgf/mm 2 for the deposit from the coarse powder and 2000 kgf/mm 2 for that from the fine powder. Those values of hardness, which were in the highest level among the boron-carbon composite coatings made by other methods [10], were apparently lower than the hardness of 3450 kgf/mm 2 of sintered B 4 C.…”
Section: Structure Of the B4c Depositmentioning
confidence: 64%
“…By IBE, various crystallized thin films, including (Ba,Sr)TiO 3 [12] and SrAl 2 O 4 :Eu [13], were prepared at room temperature in vacuum. Thin films of B 12+x C 3-x were also prepared on Si single crystal substrates [14]. For thermoelectric measurements, B 12+x C 3-x should be deposited on glass substrates whose Seebeck coefficient and electric conductivity are lower than that of B 12+x C 3-x .…”
Section: Introductionmentioning
confidence: 99%