Study of transitions in thulium atoms in the 410–420-nm range for laser cooling

Abstract

Boron carbide (B 4 C) is known as a material having hardness, wear resistance and stability at high temperature. The preparation of thin films of B 4 C, therefore, is very important from the viewpoint of industrial applications. We have experimentally attempted to prepare thin films of B 4 C using the pulsed ion-beam evaporation (IBE) technique, where high-density ablation plasma is produced by an intense pulsed ion beam interaction with the target. The crystallized B 4 C thin films have been successfully deposited on a Si (100) substrate by front-side and mask-side deposition. Absorptions associated with the B-C combination and the vibration of B 12 -B 12 clusters have been observed by Fourier transform infrared spectroscopy. The Vickers hardness of the film deposited by front-side deposition is observed to be HV ∼ 2300.

Large spin relaxation rates in trapped submerged-shell atoms

“…(b) Absorption spectrum of Tm on the 409.5 nm (J = 7/2 → 5/2) transition in a 3.3 T (8.8 K) deep trap at 500 mK with peak density of 3.8 × 10 11 cm −3 . Tm has a single isotope with I = 1/2 and known hyperfine splitting[34].…”