6kV 4H-SiC BJTs with Specific On-resistance Below the Unipolar Limit using a Selectively Grown Base Contact Process

Balachandran, S.; Li, C.; Losee, Peter A.; Bhat, Ishwara B.; Chow, T. Paul

doi:10.1109/ispsd.2007.4294990

Cited by 35 publications

(11 citation statements)

References 7 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The fundamental limits for the drift region resistance of unipolar devices fabricated in SiC and GaN are shown by solid lines, with GaN shown as a range based on the literature and our observations. Published results from vertical SiC power devices show that commercial SiC devices are already approaching the theoretical limit for this material system [1][2][3][4]. Published results from lateral (horizontal) GaN power devices fabricated on sapphire, SiC, or silicon substrates, on the other hand are far from the fundamental GaN limit.…”

Section: Introductionmentioning

confidence: 99%

Very high performance GaN-on-GaN diodes

Kizilyalli

Edwards

Bour

et al. 2013

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

View full text Add to dashboard Cite

Vertical diodes have been fabricated on low defect density bulk GaN substrates. The devices demonstrate performance near theoretical limits for onstate resistance at a given rated breakdown voltage, based on GaN material properties. Breakdown voltage up to 3.7 kV has been measured. Measurements reveal robust avalanche breakdown, critical in an inductive circuit environment. Measurement of switching transients (5-25A) indicates the lack of minority carrier storage and low capacitances resulting in very low switching losses for the devices. IntroductionHigh-efficiency power semiconductor devices are one of the key elements required for improving the efficiency of power electronic systems. For the last three decades, silicon power devices (MOSFETS, IGBTs, and diodes) have dominated the power device market. During this time there have been tremendous improvements in silicon power device performance. However, these devices are now approaching the physical limits of silicon. Alternative materials, such as silicon carbide (SiC) and gallium nitride (GaN) are enabling a new generation of power devices that can far exceed the performance of silicon-based devices. SiC diodes have already been commercialized and they are increasing market share in applications that demand high efficiency. There is great interest in developing GaN-based power devices because the fundamental material based FOM of GaN is significantly better than SiC and Si. Robust, reliable GaN devices will allow continued improvement in the efficiency of power electronics systems.

show abstract

Section: Introductionmentioning

confidence: 99%

Very high performance GaN-on-GaN diodes

Kizilyalli

Edwards

Bour

et al. 2013

The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications

View full text Add to dashboard Cite

show abstract

“…2 shows the specific ON-resistance of various SiC switches in comparison with modern silicon devices. Of course, this is a simplified view as the devices [14,20,[24][25][26][27][28][29][30][31][32][33][34][35] NB: For the bipolar devices R ON A was calculated as the voltage drop at a nominal current density divided by the nominal current density For the references other than the indicated see [3] www.ietdl.org…”

Section: Conclusion On Sic-switchesmentioning

confidence: 99%

SiC and GaN devices – wide bandgap is not all the same

Kaminski

Hilt

2014

IET Circuits, Devices & Systems

114

View full text Add to dashboard Cite

Silicon carbide (SiC)-diodes have been commercially available since 2001 and various SiC-switches have been launched recently. Parallelly, gallium nitride (GaN) is moving into power electronics and the first low-voltage devices are already on the market. Currently, it seems that GaN-transistors are ideal for high frequency ICs up to 1kV (maybe 2kV) and maximum a few 10A. SiC transistors are better suited for discrete devices or modules blocking 1kV and above and virtually no limit in the current but in that range they will face strong competition from the silicon insulated gate bipolar transistors (IGBTs). SiC and GaN Schottky-diodes would offer a similar performance, hence here it becomes apparent that material cost and quality will finally decide the commercial success of wide bandgap devices. Bulk GaN is still prohibitively expensive, whereas GaN on silicon would offer an unrivalled cost advantage. Devices made from the latter could be even cheaper than silicon devices. However, packaging is already a limiting factor for silicon devices even more so in exploiting the advantage of wide bandgap materials with respect to switching speed and high temperature operation. After all, reliability is a must for any device no matter which material it is made of.

show abstract

“…Besides, gaining lower onresistance results in lower loss which is as important as improving the breakdown voltage to its theoretical value. Several termination techniques have been developed and optimized to approach the ideal breakdown voltage and improve the termination efficiency [1][2][3][4][5][6][7][8][9][10][11][12]. Among them, implantation-free devices with low R ON have the advantage of preventing life-time-killing defects and current degradation caused by ion implantation [10].…”

Section: Introductionmentioning

confidence: 99%

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

Elahipanah

Salemi

Zetterling

et al. 2015

IEEE Electron Device Lett.

View full text Add to dashboard Cite

PostprintThis is the accepted version of a paper published in IEEE Electron Device Letters. This paper has been peer-reviewed but does not include the final publisher proof-corrections or journal pagination.Citation for the original published paper (version of record):Elahipanah, H., Salemi, A., Zetterling, C-M., Östling, M. (2015) 5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension. IEEE Electron Device Letters IndexTerms-4H-SiC, multiple-shallow-trench JTE, implantation-free, high-voltage BJT.

show abstract

6kV 4H-SiC BJTs with Specific On-resistance Below the Unipolar Limit using a Selectively Grown Base Contact Process

Cited by 35 publications

References 7 publications

Very high performance GaN-on-GaN diodes

Very high performance GaN-on-GaN diodes

SiC and GaN devices – wide bandgap is not all the same

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

Contact Info

Product

Resources

About