50-nm T-Gate InAlAs/InGaAs Metamorphic HEMTs With Low Noise and High $f_{T}$ Characteristics

Lim, Byeong Ok; Lee, Mun Kyo; Baek, Tae‐Jong; Han, Min; Kim, Sung Chan; Rhee, Jin‐Koo

doi:10.1109/led.2007.899442

Cited by 14 publications

(8 citation statements)

References 11 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Dual-mode filter is the most common multiple-mode filter, which has been analyzed deeply in many literatures with various configurations [2]. Triple-mode or other multimode microstrip planar filters are reported in [3][4][5][6][7][8][9][10][11]. Xue and coworkers proposed a compact microstrip resonant cell structure, which is essentially a triple-mode resonator [3].…”

Section: Discussionmentioning

confidence: 99%

See 1 more Smart Citation

Low‐loss W‐band CPW bandpass filter using annular CPW branch‐line coupler with open load stubs

Van

Anh

Kim

et al. 2011

Micro & Optical Tech Letters

Self Cite

View full text Add to dashboard Cite

A W‐band coplanar waveguide (CPW) low‐loss annular branch‐line bandpass filter for planar integrated millimeter‐wave circuits is presented. It is designed by using the annular branch‐line coupler as a transversal filtering section by loading the coupled ports of the coupler with suitable open load stubs and taking the isolated port as the output node. The proposed W‐band bandpass filter shows very good performance, insertion‐loss of 0.7 dB with a 14.9% of 3 dB relative bandwidth at center frequency of 94 GHz and return loss is better than −27 dB at the center frequency. The designed and fabricated bandpass filter exhibits the good performance for monolithic integrated millimeter‐wave circuit applications. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2400–2403, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26264

show abstract

Section: Discussionmentioning

confidence: 99%

“…The W‐band annular branch‐line BPF was fabricated at Millimeter‐wave innovation Technology Research Center using the standard MMIC processes [7–9] to get the experimental results. The designed bandpass filter was fabricated on 250 μm thick GaAs substrate with the relative dielectric constant of 12.9.…”

Section: Fabrication and Measurementmentioning

confidence: 99%

Low‐loss W‐band CPW bandpass filter using annular CPW branch‐line coupler with open load stubs

Van

Anh

Kim

et al. 2011

Micro & Optical Tech Letters

Self Cite

View full text Add to dashboard Cite

show abstract

“…In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum well struc ture, lattice matched to InP substrate, has continued to draw attention as a potential material for high speed electronic and optoelectronic devices [1][2][3]. A double quantum well structure is an interesting system which exhibits tunneling coupling in addition to quantum confinement effect.…”

Section: Introductionmentioning

confidence: 99%

“…In the present work we analyse the electric field induced changes in the multisubband electron mobil 1 The article is published in the original. ity in an In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As double quantum well structure.…”

Section: Introductionmentioning

confidence: 99%

Enhancement of low temperature electron mobility due to an electric field in an InGaAs/InAlAs double quantum well structure

Sahu

Palo²,

Nayak

et al. 2014

Semiconductors

View full text Add to dashboard Cite

The effect of external electric field F on multisubband electron mobility µ in an In 0.53 Ga 0.47 As/In 0.52 Al 48 As double quantum well structure is analyzed. We consider scatterings due to ionized impurities, interface roughness and alloy disorder to analyze µ. The variation of scattering mechanisms as a function of F for different structure parameters shows interesting results through intersubband interactions. For small well widths, the mobility is governed by interface roughness scattering. When two subbands are occupied, the effect of impurity scattering gets enhanced through intersubband interactions. Our results of enhancement in mobility as a function of F, can be utilized for low temperature devices.

show abstract

“…In 0.53 Ga 0.47 As/In 0.52 Al 0.48 As quantum well structure, lattice matched to InP substrate, has continued to draw attention as a potential material for high speed electronic and optoelectronic devices [1,2]. A double quantum well structure is an interesting system which exhibits tunneling coupling along with quantum confinement effect.…”

Section: Introductionmentioning

confidence: 99%

Electric field induced enhancement of low temperature electron mobility in coupled InGaAs/InAlAs double quantum well structures

Sahu

Palo²,

Tripathy³

et al. 2012

AIP Conference Proceedings

View full text Add to dashboard Cite

Effect of electric field on low temperature multisubband electron mobility in a coupled Ga 0.5 In 0.5 P / GaAs quantum well structure Electric field effects on electron mobility in n-AlGaAs/GaAs/AlGaAs single asymmetric quantum wells J. Abstract.We analyse the effect of uniform electric field on the low temperature multisubband electron mobility in an InGaAs/InAlAs double quantum well structure in which the side barriers are delta-doped with layers of Si. The electric field, which is perpendicular to the interface plane of the structure, alters the subband energy levels and wave functions which in turn leads to a change in the subband mobility. We consider ionized-impurity scattering, alloy disorder scattering and interface roughness scattering and analyse the changes in them due to the applied electric field mediated by the intersubband interactions. We show that application of the field transforms a system from double subband occupancy to single subband occupancy thereby suppressing the intersubband interaction which in turn enhances the mobility. We also change the well width to study its effect on mobility as a function of the applied electric field, which yields interesting results.

show abstract

50-nm T-Gate InAlAs/InGaAs Metamorphic HEMTs With Low Noise and High $f_{T}$ Characteristics

Cited by 14 publications

References 11 publications

Low‐loss W‐band CPW bandpass filter using annular CPW branch‐line coupler with open load stubs

Low‐loss W‐band CPW bandpass filter using annular CPW branch‐line coupler with open load stubs

Enhancement of low temperature electron mobility due to an electric field in an InGaAs/InAlAs double quantum well structure

Electric field induced enhancement of low temperature electron mobility in coupled InGaAs/InAlAs double quantum well structures

Contact Info

Product

Resources

About