We analyze the low temperature multisubband electron mobility in AlxGa1−xAs–GaAs parabolic double quantum well structures in which the outer barriers are delta doped with Si. The structural parabolic potential, obtained from gradual variation of the alloy fraction x (from 0 to xp), partly compensates the triangular like potential profile near the outer interfaces inducing the electrons to move towards the centre of the wells. We study the effect of interplay of ionized impurity (II) scattering and alloy disorder (AD) scattering on the subband mobility. We show that when single subband is occupied both II- and AD-scatterings govern the mobility. However, once second subband is occupied, the mobility is influenced by II-scattering mediated by intersubband effects. It is gratifying to show that the mobility is considerably enhanced in parabolic double quantum wells (0.3 ≥ xp > 0) compared to the square double quantum well structures (xp = 0) at large well widths where double subband is occupied. By increasing the electron density (Ns), the enhancement increases further. We also show that in case of a parabolic single quantum well structure large enhancement in mobility is obtained compared to that of square single quantum well structure as long as single subband is occupied, unlike the double quantum well systems. Our results of mobility in parabolic double quantum wells can be utilized for low temperature device applications.
Herein, it is shown that the oscillation of low temperature electron mobility μ can be obtained as a function of external electric field F in AlxGa1−xAs based V‐shaped double quantum well (VQW) structure. The oscillation of μ can be enhanced by increasing the well width and barrier width as well as decreasing the doping concentration and height of the V‐shaped potential. The mobility due to the ionized impurity (II‐) scattering μII is responsible for the oscillation of μ through intersubband effects within double subband occupancy. On the other hand, the mobility due to the alloy disorder (AD‐) scattering, μAD, which shows almost a flat‐like character, governs the overall magnitude of μ. It is further gratifying to show that the drop in μ at the transition from single to double subband occupancy minimizes and even alters to a rise in μ by varying the AD‐scattering potential through the structure parameters of the VQW. These results can be utilized to analyze the non‐square quantum well based field effect transistors.
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