Abstract:The effect of external electric field F on multisubband electron mobility µ in an In 0.53 Ga 0.47 As/In 0.52 Al 48 As double quantum well structure is analyzed. We consider scatterings due to ionized impurities, interface roughness and alloy disorder to analyze µ. The variation of scattering mechanisms as a function of F for different structure parameters shows interesting results through intersubband interactions. For small well widths, the mobility is governed by interface roughness scattering. When two subb… Show more
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