46.5L: Late‐News Paper: Large Area Sputtered Al2O3 Films for High Mobility AM‐TFT Backplanes on PVD Array System PiVot 55kVi2

Kloeppel, Andreas; Liu, Jian; Scheer, Evelyn

doi:10.1002/j.2168-0159.2013.tb06294.x

Cited by 6 publications

(3 citation statements)

References 7 publications

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“…Recently mf-PVD Al 2 O 3 layers have been demonstrated with high deposition rate and sufficient uniformity up to Gen-8 size. 17 This might allow to replace the conventional PECVD SiO 2 layer to achieve better TFT characteristics. In this paper, we z E-mail: manoj.nag@imec.be realized IGZO-TFTs with different mf-PVD ESL (SiO 2 and Al 2 O 3 ) and compared them to conventional PECVD SiO 2 ESL based TFTs.…”

mentioning

confidence: 99%

Medium Frequency Physical Vapor Deposited Al₂O₃and SiO₂as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

Nag

Bhoolokam

Chasin

et al. 2015

ECS J. Solid State Sci. Technol.

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In this work, we report on amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with medium frequency physical vapor deposited (mf-PVD) etch-stop-layer (ESL). TFT with mf-PVD ESL show comparable characteristics such as fieldeffect mobility (μ FE ), sub-threshold slope (SS −1 ) and current ratio (I ON/OFF ) to the conventional plasma enhanced chemical vapor deposition (PECVD) ESL based TFT, however significant differences were observed in gate bias-stress stabilities. The TFTs with mf-PVD ESL showed lower threshold-voltage (V TH ) shifts compared to TFTs with PECVD ESL when stressed under a gate field of +/−1 MV/cm for duration of 10 4 seconds in dark and light conditions. We associate the better bias-stress stability of the mf-PVD ESL based TFT to better passivating properties and the low hydrogen content of the mf-PVD layer compared to PECVD layer. Amorphous oxide semiconductors (AOSs) are gaining traction to replace the a:SiH in TFTs applied in liquid crystal display (LCD) and organic light-emitting diode display (OLED) backplanes. These oxide semiconductor have high transparency and relatively high electron mobility in the amorphous state. An additional advantage lies in the low process temperature required for AOS integration on plastic film and so potentially enabling flexible transparent display and electronics. Among many AOSs, a-IGZO is the most promising due to its high mobility, excellent uniformity, and the compatibility with transparent and flexible substrate, as compared to conventional amorphous and polycrystalline silicon.1-8 For either LCD or OLED displays with IGZO backplane, bottom-gate top-contact (BGTC) ESL configuration is preferred. The ESL protects the a-IGZO back channel from damages caused during the source-drain metallization and patterning.9-11 The damage-free surface improves the bias stabilities especially at accelerated bias stress conditions under illumination. However commonly the ESL is deposited by plasma assisted CVD processes to which a-IGZO can be sensitive.12 Therefore there is a need to investigate the effect of the ESL on the characteristics of a-IGZO TFTs.PECVD based SiO 2 deposited at temperature higher than 350• C using SiH 4 /N 2 O chemistry is commonly used as an ESL in Flat-PanelDisplay (FPD) industry due to its fast deposition rate, high uniformity and good step coverage. For the integration on commercialized flexible substrates like PEN or polyimide, deposition and process temperature should be lower to prevent shrinkage of the plastic foil and allow easy de-lamination. It is known that PECVD layer deposited at lower temperature deteriorate layer quality leading to lower density, higher amount of dangling bonds and an increase in the amount of hydrogen incorporated into the SiO 2 layer. The poor density and increase of hydrogen is problematic for a-IGZO TFTs because it leads to uncontrolled doping density. [13][14] Few research groups have demonstrated the use of PVD based dielectrics (SiO 2 and Al 2 O 3 ) as passivation layer or ESL as an altern...

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mentioning

confidence: 99%

Medium Frequency Physical Vapor Deposited Al₂O₃and SiO₂as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

Nag

Bhoolokam

Chasin

et al. 2015

ECS J. Solid State Sci. Technol.

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“…Compared to the well-known rotary target sputtering system exhibiting very high target utilization larger than 80% using the cylindrical rotating targets [12], RMS system has a merit of being able to use low cost planar target. Recently, we developed dual-target RMS system, as shown in Fig.…”

Section: Methodsmentioning

confidence: 99%

3.2: Invited Paper: Application of Rotation Magnet Sputtering Technology to a‐IGZO Film Depositions

Goto

Sugawa

Ohmi

2014

Symp Digest of Tech Papers

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Application of Rotation Magnet Sputtering Technology to a-IGZO Film DepositionsTetsuya Goto*, Shigetoshi Sugawa* and Tadahiro Ohmi* * Tohoku University, Japan AbstractWe developed new magnetron sputtering equipment called rotation magnet sputtering (RMS), where multiple moving plasma loops are exited on the planar target surface, obtaining high target utilization. The moving plasma loops also worked efficiently to homogenize the spatial distribution of a-IGZO film qualities by time-averaged homogenization effect.

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“…Despite the fact that the PVD dielectrics intrinsically contain less hydrogen, other parameters such as deposition rates, uniformity, and electrical properties are often insufficient to meet the manufacturing requirements. Recently, medium frequency physical vapor deposition (mf‐PVD) Al 2 O 3 layers have been demonstrated with sufficient uniformity and deposition rate up to Gen8, and this possibly helps to replace the conventional plasma‐enhanced chemical vapor deposition (PECVD) SiO 2 layers for better bias‐stress stability of the TFT stack.…”

Section: Introductionmentioning

confidence: 99%

High performance a‐IGZO thin‐film transistors with mf‐PVD SiO₂ as an etch‐stop‐layer

et al. 2014

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In this work, we report on high‐performance bottom‐gate top‐contact (BGTC) amorphous‐Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) thin‐film transistor (TFT) with SiO2 as an etch‐stop‐layer (ESL) deposited by medium frequency physical vapor deposition (mf‐PVD). The TFTs show field‐effect mobility (μFE) of 16.0 cm2/(V.s), sub‐threshold slope (SS−1) of 0.23 V/decade and off‐currents (IOFF) < 1.0 pA. The TFTs with mf‐PVD SiO2 ESL deposited at room temperature were compared with TFTs made with the conventional plasma‐enhanced chemical vapor deposition (PECVD) SiO2 ESL deposited at 300 °C and at 200 °C. The TFTs with different ESLs showed a comparable performance regarding μFE, SS−1, and IOFF, however, significant differences were measured in gate bias‐stress stability when stressed under a gate field of +/−1 MV/cm for duration of 104 s. The TFTs with mf‐PVD SiO2 ESL showed lower threshold‐voltage (VTH) shifts compared with TFTs with 300 °C PECVD SiO2 ESL and TFTs with 200 °C PECVD SiO2 ESL. We associate the improved bias‐stress stability of the mf‐PVD SiO2 ESL TFTs to the low hydrogen content of the mf‐PVD SiO2 layer, which has been verified by Rutherford‐Back‐Scattering‐Elastic‐Recoil‐Detection technique.

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46.5L: Late‐News Paper: Large Area Sputtered Al₂O₃ Films for High Mobility AM‐TFT Backplanes on PVD Array System PiVot 55kVi²

Cited by 6 publications

References 7 publications

Medium Frequency Physical Vapor Deposited Al₂O₃and SiO₂as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

Medium Frequency Physical Vapor Deposited Al₂O₃and SiO₂as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

3.2: Invited Paper: Application of Rotation Magnet Sputtering Technology to a‐IGZO Film Depositions

High performance a‐IGZO thin‐film transistors with mf‐PVD SiO₂ as an etch‐stop‐layer

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46.5L: Late‐News Paper: Large Area Sputtered Al2O3 Films for High Mobility AM‐TFT Backplanes on PVD Array System PiVot 55kVi2

Cited by 6 publications

References 7 publications

Medium Frequency Physical Vapor Deposited Al2O3and SiO2as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

Medium Frequency Physical Vapor Deposited Al2O3and SiO2as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

3.2: Invited Paper: Application of Rotation Magnet Sputtering Technology to a‐IGZO Film Depositions

High performance a‐IGZO thin‐film transistors with mf‐PVD SiO2 as an etch‐stop‐layer

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46.5L: Late‐News Paper: Large Area Sputtered Al₂O₃ Films for High Mobility AM‐TFT Backplanes on PVD Array System PiVot 55kVi²

Medium Frequency Physical Vapor Deposited Al₂O₃and SiO₂as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

Medium Frequency Physical Vapor Deposited Al₂O₃and SiO₂as Etch-Stop-Layers for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film-Transistors

High performance a‐IGZO thin‐film transistors with mf‐PVD SiO₂ as an etch‐stop‐layer