40nm embedded Select in Trench Memory (eSTM) Technology Overview

Rosa, Francesco La; Niel, S.; Régnier, A.; Maugain, F.; Mantelli, M.; Conte, A.

doi:10.1109/imw.2019.8739731

Cited by 8 publications

(4 citation statements)

References 3 publications

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“…Moreover, integrating Flash memory into the advanced nodes has become increasingly complex and expensive due to its limited area shrink capability and growing complexity, as highlighted in several publications [43][44][45]. In response to these challenges, innovative eFlash designs were investigated, as detailed in Table 1 [46][47][48][49]. The SG-MONOS cell, combining split-gate and charge-trapping structures, enhances Flash memory performance and reliability by enabling efficient programming through source-side injection (SSI) and preventing column current leakage via series connection [46,50].…”

Section: Characteristics Of Various Storage Typesmentioning

confidence: 99%

“…The SG-MONOS cell, combining split-gate and charge-trapping structures, enhances Flash memory performance and reliability by enabling efficient programming through source-side injection (SSI) and preventing column current leakage via series connection [46,50]. The eSTM is a floating gate-based cell, gathering the advantages of a conventional split-gate NVM cell together with a more compact cell area than a typical 1 T cell [49]. By using SG-MONOS and eSTM cell, eFlash macros were successfully fabricated at 40 nm and 28 nm with impressive specifications catering to high-end automotive applications.…”

Section: Characteristics Of Various Storage Typesmentioning

confidence: 99%

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A Survey of Emerging Memory in a Microcontroller Unit

Qi,

Fan,

Cai

et al. 2024

Micromachines

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In the era of widespread edge computing, energy conservation modes like complete power shutdown are crucial for battery-powered devices, but they risk data loss in volatile memory. Energy autonomous systems, relying on ambient energy, face operational challenges due to power losses. Recent advancements in emerging nonvolatile memories (NVMs) like FRAM, RRAM, MRAM, and PCM offer mature solutions to sustain work progress with minimal energy overhead during outages. This paper thoroughly reviews utilizing emerging NVMs in microcontroller units (MCUs), comparing their key attributes to describe unique benefits and potential applications. Furthermore, we discuss the intricate details of NVM circuit design and NVM-driven compute-in-memory (CIM) architectures. In summary, integrating emerging NVMs into MCUs showcases promising prospects for next-generation applications such as Internet of Things and neural networks.

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Section: Characteristics Of Various Storage Typesmentioning

confidence: 99%

Section: Characteristics Of Various Storage Typesmentioning

confidence: 99%

A Survey of Emerging Memory in a Microcontroller Unit

Qi,

Fan,

Cai

et al. 2024

Micromachines

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“…This combination results in the proposed Triple Gate Transistor (TGT) [8]. Note that vertical deep trenches are currently used in embedded NOR Flash fabrication processes [9]. The next paragraph presents the TGT device.…”

Section: Introductionmentioning

confidence: 99%

A Novel Trench-Based Triple Gate Transistor With Enhanced Driving Capability

Gay

Marca

Aziza

et al. 2021

IEEE Electron Device Lett.

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This paper addresses the design, implementation, and characterization of a novel highdensity Triple Gate Transistor in a 40 nm embedded Non-Volatile Memory technology. Deep trenches are used to integrate two vertical transistors connected in parallel with the main planar transistor. Thanks to the built-in trenches, the proposed manufacturing process increases the transistor width without impacting its footprint. The voltage/current characteristics of a planar MOS structure are compared with the features of the new Triple Gate Transistor. The new architecture provides an improved driving capability, with an on-state drain current twice as high as its equivalent standard MOS, combined with a lower threshold voltage, suitable for low-voltage applications. Finally, the gate oxide and junction reliability are validated over the operating voltage range.

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“…Embedded scaled applications are increasing and push the evolvement of charge storage memory [1]. To address this topic, the embedded Select in Trench Memory (eSTM™) has been presented [2] [3]. As a 40 nm split-gate memory optimizing costs, area, and performances, the eSTM TM cell is a serious candidate to apply for low consumption and high reliability markets.…”

Section: Introductionmentioning

confidence: 99%