3D unsteady and steady modeling of heat and mass transfer during Cz Si crystal growth with a horizontal magnetic field

Kondratyev, A.V.; Demina, S.E.; Smirnov, Andrey; Kalaev, V.V.; Ratnieks, G.; Kadinski, L.; Sattler, Andreas

doi:10.1016/j.ijheatmasstransfer.2021.121604

Cited by 16 publications

(5 citation statements)

References 15 publications

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“…The crystal was rotated at a fixed rate of ω s = −20 rpm (clockwise rotation), while the crucible was rotated at a fixed rate of ω c = 5 rpm (anticlockwise rotation). A previous study by Kondratyev et al [28] investigated a larger diameter CZ-Si growth case with a diameter of 300 mm. The origin of the coordinate domain was set at the crucible bottom center, as shown in Figure 1.…”

Section: Physical Parametersmentioning

confidence: 99%

Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields

Cen,

Guo

2023

Crystals

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The application of magnetic fields has become a standard control technique in the CZ-Si growth industry. To investigate the impact of cusp-shaped magnetic fields (CMF) on heat and mass transfer in the melt, a series of transient three-dimensional simulations were conducted for the growth of a 100 mm CZ-Si crystal with a cylindrical crucible. The turbulent melt motion was modeled using the large eddy simulation (LES) method. Six configurations of CMF with various zero-Gaussian plane (ZGP) positions were examined and numerically compared. The computed results showed that different ZGP positions resulted in distinct types of melt convection, buoyant plumes, and thermal waves. Additionally, it was observed that the studied CMF configurations effectively reduced oxygen dissolution from the crucible wall along with oxygen impurity incorporation into the crystal. These findings demonstrate the potential for precise control of the heat and mass transfer process in CZ-Si growth through the application of suitable CMF.

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Section: Physical Parametersmentioning

confidence: 99%

Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields

Cen,

Guo

2023

Crystals

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“…S. E. Demina et al made a comprehensive analysis of sapphire growth, and a numerical model was proposed, which can predict the shape of the crystal front and allow the adjustment of growth parameter design and optimization of configuration to improve the sapphire growth quality. 9,10 Some scholars 11,12 control the stability of the melt interface in the process of crystal growth by increasing the transverse magnetic field, so as to optimize the seed crystal and improve its stability. A. V. Kolesnikov et al 13 took the growth of BGO crystals by the Czochralski method as the research object and optimized the geometric and physical parameters of the heater through numerical simulation.…”

Section: Introductionmentioning

confidence: 99%

Optimization of the quality control parameters in sapphire single crystal preparation using the Kyropoulos method

Qiao

Dong

et al. 2023

CrystEngComm

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“…In refs and , a fully 3D global model was developed for industrial-scale MCZ Si crystal growth, and the periodic behavior of melt flow patterns and off-centered temperature distributions were predicted. In ref , the applicability of unsteady and steady combined LES/RANS approaches to modeling industrial-scale CZ silicon growth with TMF was compared and found to not have significant difference in the predictions of the melt flow and temperature distribution.…”

Section: Introductionmentioning

confidence: 99%

“…In developed for industrial-scale MCZ Si crystal growth, and the periodic behavior of melt flow patterns and off-centered temperature distributions were predicted. In ref 13, the applicability of unsteady and steady combined LES/RANS approaches to modeling industrial-scale CZ silicon growth with TMF was compared and found to not have significant difference in the predictions of the melt flow and temperature distribution. Most of the previous numerical studies on melt flow during CZ silicon crystal growth with a TMF have concentrated on the suppression of natural convection, the reduction of oxygen concentration, and the oscillation of melt flow.…”

Section: Introductionmentioning

confidence: 99%

Effects of Induced Current in Crystals on the Melt Flow and the Melt–Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field

Chen

Liu

Wen

et al. 2023

Crystal Growth & Design

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Due to the high magnetic field intensity during industrial 300 mm silicon crystal growth, typically up to 0.3 T, the crystal's rotation under this transverse magnetic field (TMF) induces a current that is strong enough to impact both the melt flow and the melt/crystal interface (m/c interface) shape. This paper investigates the influence of TMF-induced current in crystals on the melt flow, temperature distribution, and interface shape through the conduction of three sets of 3D simulations that vary in the electrical conductivity of crystals, TMF intensities, and crystal rotation rates. Combined with experiments, the accuracy of the model has been validated, and a reasonable electrical conductivity of the crystal has been predicted. The study findings reveal a shift in the driving force of forced convection from centrifugal to Lorentz force when the induced current in crystal is augmented. This alteration affects the melt flow and the m/c interface shape. Notably, this study serves as a significant complement to the conventional model, which overlooks the induced current in crystals, enhancing the accuracy and comprehensiveness of the simulation outcomes to provide a robust theoretical underpinning for industrial production.

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3D unsteady and steady modeling of heat and mass transfer during Cz Si crystal growth with a horizontal magnetic field

Cited by 16 publications

References 15 publications

Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields

Three-Dimensional Simulation of Melt Convection and Oxygen Transport in CZ-Si Crystal Growth with Cusp Magnetic Fields

Optimization of the quality control parameters in sapphire single crystal preparation using the Kyropoulos method

Effects of Induced Current in Crystals on the Melt Flow and the Melt–Crystal Interface during Industrial 300 mm Czochralski Silicon Crystal Growth under a Transverse Magnetic Field

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