2017
DOI: 10.1007/978-3-319-44586-1_2
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3D Packaging Architectures and Assembly Process Design

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Cited by 14 publications
(2 citation statements)
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“…In this paper, using BDS (typically in the range of 10 MHz to 40 GHz), we have studied the oxidation of a copper layer in a purposely built through-silicon via (TSV) enabled 3-D integrated circuit (3D-IC) during cycled high-temperature storage. The devices under test (DUT) were comprised of two-level stacked dies, with a Cu damascene redistribution level (RDL) that allows for circuitry fan-out and lateral communication between the chips, as shown in Figure 1 [5,6]. In this work, we specifically focused on the RDL features.…”
Section: Introductionmentioning
confidence: 99%
“…In this paper, using BDS (typically in the range of 10 MHz to 40 GHz), we have studied the oxidation of a copper layer in a purposely built through-silicon via (TSV) enabled 3-D integrated circuit (3D-IC) during cycled high-temperature storage. The devices under test (DUT) were comprised of two-level stacked dies, with a Cu damascene redistribution level (RDL) that allows for circuitry fan-out and lateral communication between the chips, as shown in Figure 1 [5,6]. In this work, we specifically focused on the RDL features.…”
Section: Introductionmentioning
confidence: 99%
“…Hence, more efficient and stable heat dissipation materials are required when electronic devices, especially for power devices, are assembled on substrates. 11,12 Copper (Cu) is an outstanding thermal and electrical conductor and is vastly used in electronic packaging, but it is hard to achieve the anisotropic interconnection due to its isotropic conductivities. Anodized aluminum oxide (AAO) films are aluminum-based materials composing with an individual cylindrical channel array with high hardness, 13 and they are a kind of excellent dielectric materials with dielectric constant ∼4.5 varying from 10 to 20 GHz.…”
Section: Introductionmentioning
confidence: 99%