32nm Node Si and Si&lt;sub&gt;1&amp;#x2212;x&lt;/sub&gt;Ge&lt;sub&gt;x&lt;/sub&gt; SOI coplanar N channel &amp;#x201C;Vertical Dual Carrier Field Effect Transistor&amp;#x201D; for small signal mixed signal and communication applications

Xu, Ping; Xu, Jianlong; Yang, Y.H.; Xu, Yue; Zhao, Yuanfu; Bai, Dong; Shen, Shiue-Tsung; Xiao, Shiqin; Li, G.H.; Yang, Ronghua; Huang, D.H.; Huang, Chün-chieh

doi:10.1109/icsict.2008.4734480

2008 9th International Conference on Solid-State and Integrated-Circuit Technology 2008

DOI: 10.1109/icsict.2008.4734480

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32nm Node Si and Si<sub>1−x</sub>Ge<sub>x</sub> SOI coplanar N channel “Vertical Dual Carrier Field Effect Transistor” for small signal mixed signal and communication applications

Ping Xu

Jianlong Xu

Y.H. Yang³

et al.

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32nm Node Si and Si<sub>1−x</sub>Ge<sub>x</sub> SOI coplanar N channel “Vertical Dual Carrier Field Effect Transistor” for small signal mixed signal and communication applications

Cited by 1 publication

References 5 publications

22 nm node Si SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistor and its SOC with channel length less than 10nm for communication applications

22 nm node Si SOI Coplanar N Channel Vertical Dual Carrier Field Effect Transistor and its SOC with channel length less than 10nm for communication applications

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