Device physics and design theory of Si, Ge, and Si 1-x Ge x "Complementary Vertical Dual Carrier Field Effect Transistor" (CVDCFET) integrated circuits on insulator for high speed switching and high frequency mixed signal application are studied and compared. The transistor scaling projections of CVDCFET are presented and compared with the scaling projections of CMOS as given in the 2005 edition of ITRS.
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