3.3 V operation GaAs power MESFETs with 65% power-added efficiency for hand-held telephones

Lee, J.-L.; Kim, H.; Mun, Jae‐Kyoung; Kwon, O–Kyun; Lee, J.J.; Park, H.-M.; Park, S.-C.

doi:10.1049/el:19940477

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Cited by 11 publications

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“…High frequency power MESFETs operating at low voltages [1]- [10] have been actively sought for high performance hand-held phone. It is known that the size and weight of a phone can be reduced by decreasing the number of battery cells.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

A GaAs Power MESFET Operating at 3.3V Drain Voltage for Digital Hand-Held Phone

Lee¹,

Kim²,

Mun³

et al. 1995

ETRI J

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Section: Introductionmentioning

confidence: 99%

“…Recent advances in material preparation and device fabrication techniques have produced L-band GaAs power FETs operating at drain voltages of 2.9 3.6V with respectable output power and efficiencies [4]- [10], but there has been no report on the linearity performance.…”

Section: Introductionmentioning

confidence: 99%