For C D M N i W S dual-mode cellular phones, a power amplifier operating at 3.3V has been developed for the first time. The amplifier shows an output power of 31.5 dBm and 13 power-added efficiency of 61% for AMPS mode. The third order intermodulation and the fifth order one are measured to be -32 d13c and -45 dBc at an output power of 26 dBm for CDMA mode. These are good enough for dual-mode requirements.
The initial stage of solid phase epitaxial (SPE) growth of GaAs films on the vicinal Si (001) substrate was investigated by high resolution transmission electron microscopy (H-RTEM). Cross-sectional [110] and [110] HRTEM images show that the SPE growth of crystalline GaAs islands from the amorphous phase proceeds via the formation of three-dimensional islands at the initial stage and islands' size and spacing are not critically dependent on the substrate tilt direction. The average vertical and lateral dimensions of islands were found to be 9 nm and 14 nm respectively, and the average island spacing was 10 nm. Moreover, many internal stacking faults (and/or microtwins) and a few dislocations have been already formed at this initial stage of growth. In addition, the critical thickness for misfit dislocation formation is found to depend upon the islands' lateral dimensions as well as the heights.
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