25 to 40 Gb/s Si ICs in selective epitaxial bipolar technology

Felder, A.; Stengl, R.; Hauenschild, J.; Rein, H.-M.; Meister, T.F.

doi:10.1109/isscc.1993.280017

Cited by 26 publications

(4 citation statements)

References 7 publications

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“…The total charge, arriving at the k-th terminal is defined as Simulated BJT structure. 4. SIMULATION RESULTS…”

Section: The Pass-through Currentmentioning

confidence: 99%

“…The modifications described above were implemented in TRASIM [22], and the modified version of TRASIM used for transient 2D numerical simulation of a CML BJT [4]. Depending on the functional purpose of the transistor and the desire to increase speed of the ECL circuit, the transistor may operate in a high current mode, causing high level injection.…”

Section: The Pass-through Currentmentioning

confidence: 99%

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Transient Phenomena in High Speed Bipolar Devices

Obrecht¹,

Heasell²,

Vlach³

et al. 1998

VLSI Design

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“…The total charge, arriving at the k-th terminal is defined as Simulated BJT structure. 4. SIMULATION RESULTS…”

Section: The Pass-through Currentmentioning

confidence: 99%

Section: The Pass-through Currentmentioning

confidence: 99%

Transient Phenomena in High Speed Bipolar Devices

Obrecht¹,

Heasell²,

Vlach³

et al. 1998

VLSI Design

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“…The main drawback of optical CAM-based approach, however, is that it cannot be implemented in real-time because new holograms need to be recorded for each new input. Also, because a large number of holograms need to be stored [l], practical implementation difficulties pertaining to holographic crystal multiplexity and readout efficiency seriously limit the whole process [2]. Alternatively, logical processing can be realized also using optical pattern-recognition systems.…”

Section: Theorymentioning

confidence: 99%

Microwave characterization of slot line and coplanar strip line on high‐resistivity silicon for a slot antenna feed network

Simons

Taub

Lee

et al. 1994

Micro & Optical Tech Letters

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This article presents the effective dielectric constant (ϵeff) and attenuation constant (α) of an unshielded slot line and a coplanar strip line on a high‐resistivity (5000–10,000 ω‐cm) silicon wafer. The ϵeff (dc to 40 GHz) and α (dc to 26.5 GHz) in each case are determined from the measured resonant frequencies and insertion loss of a ring resonator. The measurements are carried out at room temperature. No dc bias is applied to the transmission lines. The attenuation for slot line and coplanar stripline on silicon are compared with microstrip line and coplanar waveguide on other semiconductor substrate materials. Lastly, a microstrip‐to‐slot‐line transition and its use in a feed network for linearly tapered slot antennas is demonstrated. © 1994 John Wiley & Sons, Inc.

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“…Using 0.2j.lm GaAs MESFETs (1] and 0.25 J.lm inverted AlGaAs HEMTs [2], operating frequencies of 26.5 GHz have been reported for dynamic dividers. Static dividers based on Si bipolar transistors [3 ], AlGaAs/GaAs HBTs [4] and AIInAs/ GalnAs HBTs [5] have achieved frequency limits of 25 GHz, 34.8 GHz, and 39.5 GHz, respectively. A dynamic frequency divider operating in the 18-34 GHz range based on our E/D AlGaAs/GaAs/ AlGaAs quantum well IJ.7803·1393-319JIS3.00 C 1993 IEEE transistor process was presented in [6).…”

Section: Introductionmentioning

confidence: 99%