23.4 A 56Gb/s 300mW silicon-photonics transmitter in 3D-integrated PIC25G and 55nm BiCMOS technologies

Temporiti, Enrico; Minoia, Gabriele; Repossi, Matteo; Baldi, Daniele; Ghilioni, Andrea; Svelto, F.

doi:10.1109/isscc.2016.7418078

Cited by 27 publications

(12 citation statements)

References 4 publications

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“…For more advanced integration, through silicon vias (TSVs) or through oxide vias (TOVs) [268] have been introduced into the silicon photonics integration in 2015, where an order of magnitude reduction in parasitic capacitance and two orders of magnitude higher interconnect density have been reported. Meanwhile, during 2015-2016, STMicroelectronics has introduced a design based on the fine pitch copper pillar interconnect while realizing the electronics in 65-nm CMOS or 55-nm BiCMOS technologies [264]- [266]. The reported maximum data rate was 56-Gb/s NRZ transmission with power consumption at 300 mW.…”

Section: I N T E G R At I O Nmentioning

confidence: 99%

“…To enhance the power efficiency of an MZM driver, there has been some work [265]- [267] in recent years to increase the data rate of the transmitter by using more advanced fabrication processes, such as the 28-nm CMOS or the 55-nm BiCMOS technology node. For example, a data rate of 56-Gb/s ON-OFF keying (OOK) was achieved at 300 mW [266] fabricated with the 55-nm BiCMOS technologies, which equivalent to 5.4 pJ/bit. On the other hand, several designs [259], [262], [263], [272]- [275] adopted advanced modulation formats (such as PAM-4 or PAM-16) with segmented MZM approaches, with each segment of the MZM treated as a lumped capacitive element, thus eliminating the need for termination resistors.…”

Section: P O W E R E F F I C I E N C Ymentioning

confidence: 99%

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The Emergence of Silicon Photonics as a Flexible Technology Platform

et al. 2018

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| In this paper, we present a brief history of silicon photonics from the early research papers in the late 1980s and early 1990s, to the potentially revolutionary technology that exists today. Given that other papers in this special issue give detailed reviews of key aspects of the technology, this paper will concentrate on the key technological milestones that were crucial in demonstrating the capability of silicon photonics as both a successful technical platform, as well as indicating the potential for commercial success. The paper encompasses discussion of the key technology areas of passive devices, modulators, detectors, light sources, and system integration.In so doing, the paper will also serve as an introduction to the other papers within this special issue.

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Section: I N T E G R At I O Nmentioning

confidence: 99%

Section: P O W E R E F F I C I E N C Ymentioning

confidence: 99%

The Emergence of Silicon Photonics as a Flexible Technology Platform

et al. 2018

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“…Silicon modulators are typically based on plasma dispersion effect that the refractive index of the waveguide is changed by the density of free carriers, thereby enabling the amplitude modulation with Mach-Zehnder interferometer (MZI) structures. Modern silicon MZI modulators are capable of handling data rates higher than 50 Gb/s [ 39 , 40 ]. Another type of silicon modulators is a ring resonator which exhibits a small footprint and better energy efficiency than the MZI structures [ 41 , 42 ].…”

Section: Silicon Photonics For High-speed Data Communicationsmentioning

confidence: 99%

“…Currently, the most advanced technique is shown in Figure 17 . Contrary to the previous technique, it uses the PIC as a redistribution layer itself, thus simplifying the package process [ 40 , 43 , 57 ]. The EIC is flip-chip bonded to the macro PIC in a similar way.…”

Section: Silicon Photonics For High-speed Data Communicationsmentioning

confidence: 99%

Review of CMOS Integrated Circuit Technologies for High-Speed Photo-Detection

Jeong

Bae

Jeong

2017

Sensors

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The bandwidth requirement of wireline communications has increased exponentially because of the ever-increasing demand for data centers and high-performance computing systems. However, it becomes difficult to satisfy the requirement with legacy electrical links which suffer from frequency-dependent losses due to skin effects, dielectric losses, channel reflections, and crosstalk, resulting in a severe bandwidth limitation. In order to overcome this challenge, it is necessary to introduce optical communication technology, which has been mainly used for long-reach communications, such as long-haul networks and metropolitan area networks, to the medium- and short-reach communication systems. However, there still remain important issues to be resolved to facilitate the adoption of the optical technologies. The most critical challenges are the energy efficiency and the cost competitiveness as compared to the legacy copper-based electrical communications. One possible solution is silicon photonics which has long been investigated by a number of research groups. Despite inherent incompatibility of silicon with the photonic world, silicon photonics is promising and is the only solution that can leverage the mature complementary metal-oxide-semiconductor (CMOS) technologies. Silicon photonics can be utilized in not only wireline communications but also countless sensor applications. This paper introduces a brief review of silicon photonics first and subsequently describes the history, overview, and categorization of the CMOS IC technology for high-speed photo-detection without enumerating the complex circuital expressions and terminologies.

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“…Silicon photonics is known as a promising platform for high speed applications, and in recent years, the maturity of the technology has allowed the proposal of photonic chips with the necessary components [1][2][3][4]. Even if several investigations are still ongoing [5], silicon Photonics is now a proven technology for high speed short reach optical interconnects with several companies proposing 100GBASE compatible products [6][7][8].…”

Section: Introductionmentioning

confidence: 99%

Optimization of Silicon MZM Fabrication Parameters for High Speed Short Reach Interconnects at 1310 nm

et al. 2016

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Abstract:Optical modulators are key components to realize photonic circuits, and Mach-Zehnder modulators (MZM) are often used for high speed short reach interconnects. In order to maximize the tolerable path loss of a transmission link at a given bitrate, the MZM needs to be optimized. However, the optimization can be complex since the overall link performance depends on various parameters, and, for the MZM in particular, implies several trade-offs between efficiency, losses, and bandwidth. In this work, we propose a general and rigorous method to optimize silicon MZM. We first describe the optical link, and the numerical method used for this study. Then we present the results associated to the active region for 1310 nm applications. An analytical model is generated, and allows us to quickly optimize the p-n junction depending of the targeted performances for the MZM. Taking into account the required optical link parameters, the maximum tolerable path losses for different length of MZM is determined. By applying this method, simulations show that the optimum MZM length for 25 Gbps applications is 4 mm with an efficiency of 1.87 V·cm, 0.52 dB/mm of losses. A tolerable path loss of more than 25 dB is obtained.

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23.4 A 56Gb/s 300mW silicon-photonics transmitter in 3D-integrated PIC25G and 55nm BiCMOS technologies

Cited by 27 publications

References 4 publications

The Emergence of Silicon Photonics as a Flexible Technology Platform

The Emergence of Silicon Photonics as a Flexible Technology Platform

Review of CMOS Integrated Circuit Technologies for High-Speed Photo-Detection

Optimization of Silicon MZM Fabrication Parameters for High Speed Short Reach Interconnects at 1310 nm

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