2019
DOI: 10.1002/solr.201900297
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22.6% Efficient Solar Cells with Polysilicon Passivating Contacts on n‐type Solar‐Grade Wafers

Abstract: Czochralski (Cz)‐grown upgraded metallurgical‐grade (UMG) silicon wafers degrade significantly during high‐temperature processes, eroding their appeal as a low‐cost alternative to conventional electronic‐grade silicon wafers. However, the thermal degradation in UMG wafers can be delayed by utilizing a prefabrication annealing step. Based on this, a high‐efficiency solar‐cell process is modified by selecting a single‐boron diffusion step and applying phosphorus‐doped polycrystalline films as electron‐selective … Show more

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Cited by 14 publications
(8 citation statements)
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References 25 publications
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“…The data were obtained from references. 7,11,27,54,56,59,[63][64][65][66][67][68][70][71][72][73][74][75][76][77][78][79][80][81][82][83][84][85][86][88][89][90][91][92][93][94][95][96][97][98]110 ll free charge carriers present in the poly-Si layer absorb infrared photons, much in the same way as they do in c-Si. 110 This loss also occurs when the poly-Si layer is placed at the back of a solar cell, amounting to 0.3-0.5mA/cm 2 (depending on doping) for a 140-nm-thick poly-Si layer.…”
Section: Llmentioning
confidence: 99%
See 1 more Smart Citation
“…The data were obtained from references. 7,11,27,54,56,59,[63][64][65][66][67][68][70][71][72][73][74][75][76][77][78][79][80][81][82][83][84][85][86][88][89][90][91][92][93][94][95][96][97][98]110 ll free charge carriers present in the poly-Si layer absorb infrared photons, much in the same way as they do in c-Si. 110 This loss also occurs when the poly-Si layer is placed at the back of a solar cell, amounting to 0.3-0.5mA/cm 2 (depending on doping) for a 140-nm-thick poly-Si layer.…”
Section: Llmentioning
confidence: 99%
“…Non-textured = J 0 measured on planarized surfaces,Textured = J 0 measured on textured surfaces. The data were obtained from references 7,11,27,54,56,59,[63][64][65][66][67][68][70][71][72][73][74][75][76][77][78][79][80][81][82][83][84][85][86][88][89][90][91][92][93][94][95][96][97][98]110.…”
mentioning
confidence: 99%
“…This step is critical to the implementation of heterocontacts in solar cell fabrication, which requires thermal annealing at 250–300 °C for improving surface passivation and lowering contact resistance. [ 21,29 ]…”
Section: Resultsmentioning
confidence: 99%
“…Passivating contacts facilitate the realization of highly efficient silicon solar cells. [ 1–5 ] Currently many research groups work on passivated contacts based on polycrystalline Si on oxide (POLO) or related junction schemes, applying different approaches for their implementation into industrial solar cells. [ 6–9 ] One approach is to apply nonpatterned POLO contacts for both polarities on the cell front‐ and rear side.…”
Section: Introductionmentioning
confidence: 99%