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Thin SiO x interlayers are often formed naturally during the deposition of transition metal oxides on silicon surfaces due to interfacial reaction. The SiO x layer, often only several atomic layers thick, becomes the interface between the Si and deposited metal oxide and can therefore influence the electrical properties and thermal stability of the deposited stack. This work explores the potential benefits of controlling the properties of the SiO x interlayer by the introduction of pregrown high-quality SiO x which also inhibits the formation of low-quality SiO x from the metal-oxide deposition process. This work demonstrates that a high-quality pregrown SiO x can reduce the interfacial reaction and results in a more stoichiometric MoO x with improved surface passivation and thermal stability linked to its lower D it. Detailed experimental data on carrier selectivity, carrier transport efficiency, annealing stability up to 250 °C, and in-depth material analysis are presented.

grain (Note S1, Supporting Information), which indicated that those new perovskite phases likely contained 4M-PEACl. We noted that no Cl signal was detected at the grain interior of the perovskite films according to the EDS results. Although this

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