Solution-processed molybdenum oxide for hole-selective contacts on crystalline silicon solar cells

Tong, Jingnan; Wan, Yimao; Cui, Jie; Lim, Sean; Song, Ning; Lennon, Alison

doi:10.1016/j.apsusc.2017.06.011

Cited by 46 publications

(47 citation statements)

References 52 publications

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“…It was demonstrated that the performance of nanolaminates fabricated by vacuum-process can also be realized in the solution process. Compared with the vacuum process, the nanolaminate dielectric fabricated by spin-coating succeeded in avoiding rigorous experimental conditions (such as a high ambient vacuum) and complex operation (such as controlling the deposition speed of the thin film) [2,14]. This paper provided a new idea to fabricate dielectrics by the solution process.…”

Section: Introductionmentioning

confidence: 99%

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating

et al. 2017

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In this paper, an alumina-zirconia (Al2O3-ZrO2) nanolaminate dielectric was fabricated by spin-coating and the performance was investigated. It was found that the properties of the dielectric can be adjusted by changing the content of Al2O3/ZrO2 in nanolaminates: when the content of Al2O3 was higher than 50%, the properties of nanolaminates, such as the optical energy gap, dielectric strength (Vds), capacitance density, and relative permittivity were relatively stable, while the change of these properties became larger when the content of Al2O3 was less than 50%. With the content of ZrO2 varying from 50% to 100%, the variation of these properties was up to 0.482 eV, 2.12 MV/cm, 135.35 nF/cm2, and 11.64, respectively. Furthermore, it was demonstrated that the dielectric strength of nanolaminates were influenced significantly by the number (n) of bilayers. Every increment of one Al2O3-ZrO2 bilayer will enhance the dielectric strength by around 0.39 MV/cm (Vds ≈ 0.86 + 0.39n). This could be contributed to the amorphous alumina which interrupted the grain boundaries of zirconia.

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Section: Introductionmentioning

confidence: 99%

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating

et al. 2017

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“…Figure shows the XPS spectrum of the Mo 3d core level in MoO x thin film. The two major peaks, with binding energies of 233.3 and 236.4 eV, correspond to the Mo 6+ 3d 5/2 and 3d 3/2 , respectively . And the minor ones centered at 232.0 and 235.0 eV can be attributed to Mo 5+ .…”

Section: Resultsmentioning

confidence: 94%

“…More and more attention has been paid to the novel silicon heterojunction (SHJ) solar cells by making use of metal oxides to replace the conventional doped hydrogenated amorphous Si (a‐Si:H) thin films as the carrier‐selective transport layers . Due to the wide‐bandgap nature, optional work functions, and relatively simple fabrication techniques related to the metal oxides, the novel SHJ solar cells show great potential to further improve the efficiency and reduce the cost of c‐Si‐based solar cells . Differences between the work functions of the metal oxides and Fermi levels of the c‐Si lead to a large energy band bending of the c‐Si near the interface, which allows only one type of carrier to pass through and inhibits carrier recombination at the interface .…”

Section: Introductionmentioning

confidence: 99%

“…In recent years, remarkable achievements have been made on the SHJ solar cells using molybdenum oxide (MoO x ) with wide bandgap (3.0–3.3 eV) and high work function (>6 eV) as the hole‐selective transport layer (HSL) to replace the p‐type a‐Si:H thin film . Various techniques, such as thermal evaporation, electron beam evaporation, atomic layer deposition, sputtering, and solution‐processed method, are available for the preparation of MoO x thin films. By using thermal evaporated MoO x thin films as the HSL, SHJ solar cells with power conversion efficiencies up to 22.5% were fabricated by Geissbuhler et al Yu et al prepared the MoO x films using electron beam evaporation and achieved an efficiency of 14.2% on a plane SHJ solar cell with the structure of MoO x /n‐type c‐Si/MgO.…”

Section: Introductionmentioning

confidence: 99%

“…By using thermal evaporated MoO x thin films as the HSL, SHJ solar cells with power conversion efficiencies up to 22.5% were fabricated by Geissbuhler et al Yu et al prepared the MoO x films using electron beam evaporation and achieved an efficiency of 14.2% on a plane SHJ solar cell with the structure of MoO x /n‐type c‐Si/MgO. A solution‐processed method was reported by Tong et al to form the MoO x layers by spin coating hydrogen molybdenum bronze solution on crystalline silicon wafer surfaces. The developments of the novel heterojunction solar cells with the MoO x HSL are very exciting and the efficiency is expected to be further improved in the future.…”

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Silicon Heterojunction Solar Cells with MoO_x Hole‐Selective Layer by Hot Wire Oxidation–Sublimation Deposition

Zhou

Yang

et al. 2020

Solar RRL

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In this article, a novel hot wire oxidation–sublimation deposition (HWOSD) technique, as an optional technology, is developed to prepare molybdenum oxide (MoOx) thin films. Silicon heterojunction (SHJ) solar cells with the HWOSD MoOx as a hole‐selective transport layer (HSL) are fabricated. A power conversion efficiency up to 21.10% is achieved on a champion SHJ solar cell using a 14 nm MoOx layer as the HSL. Dark current density–voltage–temperature (J–V–T) characteristics of the SHJ solar cell are measured at temperatures ranging from 200 to 380 K. Transport processes including thermionic emission of electrons over the potential barrier and quantum‐assisted tunneling of holes through the gap states in the MoOx layer are used to fit the J–V curves of the MoOx/n‐c‐Si heterojunction. The investigation of the transport mechanisms provides a better understanding of the characteristics of the novel SHJ solar cells and it is helpful to fully demonstrate the potential of such kinds of solar cells in the future.

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Low Oxygen Content MoO_x and SiO_x Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

Li,

Kang,

Wang

et al. 2023

Adv Funct Materials

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In crystalline silicon (c‐Si) solar cells, the hole transport layer (HTL) made of high oxygen content MoOx (x > 2.85, H‐MoOx) evaporating from molybdenum trioxide is not ideal due to low optical bandgap and interface reaction effects. This limits the power conversion efficiency (PCE) and stability of c‐Si solar cells. To improve this, low oxygen content MoOx (x < 2.85, L‐MoOx) with a wide bandgap of 3.87 eV, deposited using molybdenum dioxide (MoO2), is explored and implemented. The c‐Si/SiOx (FGA, forming gas annealing)/L‐MoOx heterojunction has a low contact resistivity of ≈15.06 mΩ cm2, which is almost one order of magnitude lower than that of c‐Si/SiOx(FGA)/H‐MoOx heterojunction. Using L‐MoOx as the HTL, a c‐Si solar cell based on the SiOx passivation layer shows a fill factor of 84.38% and PCE of 21.75%, representing the highest efficiency for MoOx‐based p‐type c‐Si solar cells. Scanning transmission electron microscopy results show that the L‐MoOx HTL effectively enhances the stability of c‐Si solar cells when exposed to air by reducing Ag and Si element diffusion into MoOx. This successful preparation of efficient and stable MoOx HTL films, while preserving their field‐effect passivation ability, provides valuable insights into the development of high‐performance HTL.

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Solution-processed molybdenum oxide for hole-selective contacts on crystalline silicon solar cells

Cited by 46 publications

References 52 publications

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating

Silicon Heterojunction Solar Cells with MoO_x Hole‐Selective Layer by Hot Wire Oxidation–Sublimation Deposition

Low Oxygen Content MoO_x and SiO_x Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

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Solution-processed molybdenum oxide for hole-selective contacts on crystalline silicon solar cells

Cited by 46 publications

References 52 publications

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating

Properties-Adjustable Alumina-Zirconia Nanolaminate Dielectric Fabricated by Spin-Coating

Silicon Heterojunction Solar Cells with MoOx Hole‐Selective Layer by Hot Wire Oxidation–Sublimation Deposition

Low Oxygen Content MoOx and SiOx Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency

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Product

Resources

About

Silicon Heterojunction Solar Cells with MoO_x Hole‐Selective Layer by Hot Wire Oxidation–Sublimation Deposition

Low Oxygen Content MoO_x and SiO_x Tunnel Layer Based Heterocontacts for Efficient and Stable Crystalline Silicon Solar Cells Approaching 22% Efficiency