21.5L: Late‐News Paper: Measurement of Exo‐Electron Emission from MgO Thin Film of AC‐PDP

Abstract

Exoelectron emission from MgO thin film was measured by attaching a high precision current sensor to the address electrode of rear plate of test panels of AC‐PDP. The measured results revealed that the exoelectron emission currents vary very sensitively with the type of doping elements used and measuring temperatures. The activation energy of the exo‐electron emissions estimated from the emission curves indicated that the trap levels lies between 0.05∼0.32eV below the bottom of its conduction band. This suggests that shallow electron trap levels within MgO film are mainly responsible for the exo‐electron emissions, rather than deep trap levels like F‐type centers.

Numerical analysis of density of energy states for electron‐emission sources in MgO

“…Yan et al 3 measured current due to exoelectron emission for discharge cells firstly and found that the inverse of t s was proportional to the exoelectron emission currents. Kim et al [4][5][6] found that exoelectron current changed according to the applied discharge voltage, the electricfield-dependent mechanism for electron emission was suggested and explained according to the non-uniformity of wall charge near the MgO surface. Yoshino et al 7 measured the dependence of t s on applied discharge voltage and wall voltage using a discharge cell with large electrodes and suggested the electric-field-dependent mechanism for exoelectron emission.…”