Numerical analysis of density of energy states for electron‐emission sources in MgO

Abstract

Abstract— An analytical method to determine the density of energy states of electron‐emission sources (EESs) in chemical‐doped MgO is described using a discharge probability model and a thermal excitation and emission model. The density of energy states for multiple types of EESs is represented by using a linear combination of Gaussian functions of which parameters are determined by the theoretical emission time constant of an exoelectron and statistical delay time ts extracted from experimental stochastic distributions of discharge delay time in plasma‐display panels. When applied to Si‐doped MgO, the effective number of Si EES is calculated to be 1.8 × 106 per cell. The average and standard deviations of activation energy have an energy level of 770 meV and a large value of 55 meV. In Si and H co‐doped MgO, the high peak density of [H2−]0 appears at 550 meV. ts at the short time interval of 1 msec decreases and is independent of temperature due to exoelectron emission from the [H2−]0. The dependence of ts at a time interval of 10 msec on temperature becomes weak because the energy structure of the Si EES broadens significantly attributed to the electrostatic effects of the doped H atoms.

Very‐sensitive direct measurement of plasma‐display exoemission

“…2 Too much exoemission can cause a loss of wall voltage, which can also cause addressing failures. 3 Exoemission decays significantly with time after the last discharge with different time profiles which depend on the MgO impurity and defect levels, 4 and on temperature. 5,6 The level of exoemission also depends on the amount of discharge excitation that might occur from sustaining discharges or from reset discharges.…”