2.5 kV Vertical Ga₂O₃ Schottky Rectifier With Graded Junction Termination Extension

Vertical metal–dielectric–semiconductor diode on (001) β-Ga2O3 with high-κ TiO2 interlayer exhibiting reduced turn-on voltage and leakage current and improved breakdown

“…5(a). 7,[9][10][11][12][15][16][17][18][19][20][21]29,31,32,34) The / V R bk 2 on,sp of 480 MW cm −2 is the highest reported for MDS diode on β-Ga 2 O 3 and is in-class with several other recent β-Ga 2 O 3 diode reports. However, this is accomplished with a very low V .…”

Superior high temperature performance of 8 kV NiO/Ga2O3vertical heterojunction rectifiers

“…The forward current transport mechanism in such junctions is typically recombination at low biases and trap-assisted tunneling at higher bias. 10,21–26 Promising rectifier performance has been reported with this approach, 14–36 including V B of 8.32 kV, with figure of merit 13.2 GW cm −2 . 15…”

15 MeV proton damage in NiO/β-Ga2O3vertical rectifiers

“…This has led to recent demonstrations of vertical rectifiers with breakdown voltages more than 8 kV with excellent high temperature operation [9]. While the device performance is promising in terms of dc and switching applications [10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26], little is known about the effects of radiation on these heterojunctions. While the Ga 2 O 3 is known to be relatively resistant to total dose damage [27,28], large reversible changes in current-voltage characteristics of the heterojunctions have been observed after Co-60 gamma ray exposure which appears to be due to conductivity changes in the NiO [29].…”