2-20-GHz GaAs Traveling-Wave Power Amplifier

Ayasli, Y.; Reynolds, L.D.; Mozzi, R. L.; Hanes, L.K.

doi:10.1109/tmtt.1984.1132667

Cited by 85 publications

(11 citation statements)

References 4 publications

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“…Eq. (1.34) indicates that increased periphery per stage helps to increase efficiency if this increased periphery does not adversely affect the gain at highest frequency of interest (Ayasli, Mozzi et al, 1982;Ayasli, Reynolds et al, 1984).…”

Section: Traveling Wave Architecturementioning

confidence: 99%

“…Usually TWA utilizes a single-stage design, but several papers propose different combinations, including parallel (Ayasli, Reynolds et al, 1984), cascaded single-stage (CSSDA) (Tarar et al, 2015), multistage, matrix (Kao & Chen et al, 2013) and even a distributed Doherty amplifier (Lee, Lee, Kam et al, 2009;Cho & Kim et al, 2007).…”

Section: Traveling Wave Architecturementioning

confidence: 99%

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Mid-band 5G wireless network power amplifier research

Vasjanov¹

2019

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Vilnius 2019 Disertacija rengta 2015-2019 metais Vilniaus Gedimino technikos universitete. Vadovas doc. dr. Vaidotas BARZDĖNAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001). Vilniaus Gedimino technikos universiteto Elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo taryba: Pirmininkas prof. habil. dr. Romualdas NAVICKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001). Nariai: dr. Alvydas LISAUSKAS (Lenkijos mokslų akademijos Aukšto slėgio fizikos institutas, fizika-N 002), doc. dr. Vitalij NOVICKIJ (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001), prof. dr. Šarūnas PAULIKAS (Vilniaus Gedimino technikos universitetas, elektros ir elektronikos inžinerija-T 001), prof. dr. Algimantas VALINEVIČIUS (Kauno technologijos universitetas, elektros ir elektronikos inžinerija-T 001). Disertacija bus ginama viešame Elektros ir elektronikos inžinerijos mokslo krypties disertacijos gynimo tarybos posėdyje 2019 m. birželio 13 d. 10 val. Vilniaus Gedimino technikos universiteto senato posėdžių salėje.

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Section: Traveling Wave Architecturementioning

confidence: 99%

Section: Traveling Wave Architecturementioning

confidence: 99%

Mid-band 5G wireless network power amplifier research

Vasjanov¹

2019

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“…A frequently used approach for decade bandwidth amplifiers is the distributed amplifier [3]. However for low frequencies like the current 0.05-2GHz design distributed architecture leads to large inductive elements taking up excessive area.…”

Section: Broadband Pa Topologymentioning

confidence: 99%

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

Krishnamurthy¹,

Wang²,

Landberg³

et al. 2008

2008 IEEE Compound Semiconductor Integrated Circuits Symposium

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We have demonstrated a RLC matched GaN HEMT power amplifier with 12dB gain, 0.05-2.0 GHz bandwidth, 8W CW output power and 36.7-65.4% drain efficiency over the band. The amplifier is packaged in a ceramic SO8 package and contains a GaN on SiC device operating at 28V drain voltage, alongside GaAs integrated passive matching circuitry. A second circuit designed for 48V operation and 15W CW power over the same band, obtains over 20W under pulsed condition with 10% duty cycle and 100μs pulse width. CW measurements are pending after assembly in an alternate high power package. These amplifiers are suitable for use in wideband digital cellular infrastructure, handheld radios, and jamming applications.

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“…The traditional technique to achieving wide-band amplification is either using travelling wave (TW) approach [1,2], or designing wide-band matching circuits to transform the device input and output impedances to 50 ohms [3]. The TW technique uses multiple devices to simulate a 50-ohm transmission line to achieve wide bandwidth.…”

Section: Introductionmentioning

confidence: 99%

High-power GaN MMIC PA Over 40–4000MHz

Ezzeddine

Hung

Viveiros

et al. 2013

2013 IEEE MTT-S International Microwave Symposium Digest (MTT)

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We report a high-performance GaN MMIC power amplifier operating from 40MHz to 4,000MHz. The MMIC achieved 80W pulsed (100us pulse width and 10% duty cycle) output power (P5dB) with 54% efficiency at 40MHz, 50W with about 30% efficiency across most of the mid band, and gradually decreases to 30W with 22% efficiency at 4000MHz. Power gain is 25dB across the 40-4000MHz band. This ultra wideband performance is achieved by both tailoring the device output impedance, and using a unique wide-band, circuitmatching topology. Detailed design techniques of both the device and the matching circuit will be presented.Index Terms -Broadband amplifiers, high-voltage techniques, microwave devices, GaN MMIC PA.

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2-20-GHz GaAs Traveling-Wave Power Amplifier

Cited by 85 publications

References 4 publications

Mid-band 5G wireless network power amplifier research

Mid-band 5G wireless network power amplifier research

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

High-power GaN MMIC PA Over 40–4000MHz

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2-20-GHz GaAs Traveling-Wave Power Amplifier

Cited by 85 publications

References 4 publications

Mid-band 5G wireless network power amplifier research

Mid-band 5G wireless network power amplifier research

RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

High-power GaN MMIC PA Over 40&#x2013;4000MHz

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Product

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High-power GaN MMIC PA Over 40–4000MHz