High-power GaN MMIC PA Over 40&amp;#x2013;4000MHz

Ezzeddine, A.; Hung, H. Alfred; Viveiros, Edward; Huang, H.C.

doi:10.1109/mwsym.2013.6697363

Cited by 13 publications

(6 citation statements)

References 9 publications

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“…Stacked-FET High-Power Amplifiers transistors are stacked in order to increase the total breakdown voltage. Stacked transistor amplifiers are demonstrated in Si-based [4]- [11] technologies, GaAs [1], [12]- [18], and GaN [19] technologies.…”

Section: Design Procedures For Integrated Microwave Gaasmentioning

confidence: 99%

Design Procedure for Integrated Microwave GaAs Stacked-FET High-Power Amplifiers

Bent¹,

Hek²,

Vliet³

2019

IEEE Trans. Microwave Theory Techn.

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The application of stacked-FETs in power amplifiers allows for a supply voltage higher than supported by the breakdown voltage of a single transistor. Potential benefits of the increased supply voltage are reduced supply currents and a lower matching ratio at the output of the amplifier. Furthermore, an increased output power per chip area is obtained due to the reduction in passive structures resulting in more area-efficient power combining. In this paper, the procedure for the design of integrated microwave stacked-FET is discussed. Several options for the correct distribution of RF voltage and current swings are investigated and the relationship between the number of stacked transistors and bandwidth is addressed. The procedure is demonstrated by the design of an S-band GaAs stacked-FET containing three transistors. This stacked-FET is applied in an S-band HPA that has a PAE of more than 40% at an output power of 20 W, which is more than twice the output power of any previously reported GaAs stacked-FET HPA.

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Section: Design Procedures For Integrated Microwave Gaasmentioning

confidence: 99%

Design Procedure for Integrated Microwave GaAs Stacked-FET High-Power Amplifiers

Bent¹,

Hek²,

Vliet³

2019

IEEE Trans. Microwave Theory Techn.

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“…The broadband microwave power amplifiers (PAs) are essential components in an ultra-wideband system, electronic warfare, search and rescue software radio, radar and software reconfigurable communication link, to deal with multiple standards RF signals in a single portable or mobile terminal (Quaglia et al, 2019;Ezzeddine et al, 2013;Reese et al, 2010;Samanta, 2015;Ghavidel et al, 2017). Since there is a continuous demand to reduce power consumptions and costs of these terminals, this has led to an increased research focus on efficient and low-cost wideband PAs (Ezzeddine et al, 2013).…”

Section: Introductionmentioning

confidence: 99%

A compact broadband high power quasi-MMIC GaN power amplifier

Liu

Lin

Wu³

et al. 2021

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Purpose The design and implementation of a broadband quasi-monolithic microwave integrated circuit (q-MMIC) power amplifier (PA) is presented for 0.2 to 2.2 GHz applications. Design/methodology/approach To obtain an efficient, high-gain and high-power performance with in a compact and low-cost size, the prototype is based on Gallium nitride (GaN) on SiC 0.25-µm transistors, whereas the passive matching networks are realized on an AlN substrate as thin film circuit. Findings Measured results of the q-MMIC PA across the 0.2 to 2.2 GHz band show at least 32 ± 3 dB small-signal gains, an output power of 7 to 12 W and an average power add efficiency greater than 54%. The q-MMIC occupies an area of 12.8 × 14.5 mm2. Originality/value To the best of the authors’ knowledge, this work reports the first full integrated PA which covers the frequency range of 0.2 to 2.2 GHz and achieves the combination of highest gain, about 10 W output power, together with the smallest component size among all published GaN PAs to date.

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“…Ezzeddine and Huang stacked four transistors at the input and output stage respectively to develop a GaAs PA with a bandwidth of 30 MHz to 2.5 GHz . They also designed a stacked GaN PA circuit with ultra‐high broadband (40 MHz‐4000 MHZ) and then developed a broadband balun as a combiner to increase the output power . Fritsche et al used a differential stacked circuit with true inductors in SiGe BiCMOS and obtained a bandwidth of 1.7 GHz to 2.5 GHz .…”

Section: Introductionmentioning

confidence: 99%

Analysis and design of a stacked power amplifier with 196% fractional bandwidth using equivalent circuit model

Wang

et al. 2020

Int J RF Microw Comput Aided Eng

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Stacked structure is a good solution to overcome the low output voltage swing provided by a single device. When several devices are stacked, the bandwidth and output power are multiple times higher. This article analyzes the small‐signal voltage gain of the stacked structure, deriving the gain expression of the high‐frequency model and simplified model. Based on the specific device parameter, the different small‐signal voltage gains between the two models are compared and the designed stacked structure is proved to obtain a flat gain at low frequencies below about 3 GHz. To our best knowledge, this is the first article to analyze the gain flatness of stacked structure with two equivalent circuit models. To verify the stacked theory, a pseudomorphic high‐electron‐mobility transistor（PHEMT） power amplifier (PA) is implemented using 0.25 μm Gallium arsenide (GaAs) technology. The PA achieves an ultra‐high bandwidth of 30 MHz to 3 GHz and a linear gain of 21 dB ± 1.5 dB. At a 16‐V drain bias voltage, a saturated output power of higher than 2 W and a peak power‐added efficiency (PAE) of 44.1% are attained.

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High-power GaN MMIC PA Over 40–4000MHz

Cited by 13 publications

References 9 publications

Design Procedure for Integrated Microwave GaAs Stacked-FET High-Power Amplifiers

Design Procedure for Integrated Microwave GaAs Stacked-FET High-Power Amplifiers

A compact broadband high power quasi-MMIC GaN power amplifier

Analysis and design of a stacked power amplifier with 196% fractional bandwidth using equivalent circuit model

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