RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

Krishnamurthy, K.; Wang, D.; Landberg, B.; Martin, Jan M. L.

doi:10.1109/csics.2008.42

Cited by 8 publications

(3 citation statements)

References 20 publications

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“…For realizing the 30 MHz∼3 GHz ultra-broadband matching design, the input impedance matching network adopts a bridge-T lossy matching structure. The traditional bridge-T lossy matching circuit structure presented in [27] is restricted by the value of the gate-source parasitic capacitance C gs , which results in the limited operating frequency bandwidth and difficult bandwidth expansion. The tuning capacitor C tune is used to expand the operating frequency bandwidth by reducing the value of the input parasitic capacitance of stacked-FET.…”

Section: Circuit Designmentioning

confidence: 99%

A 30MHz-3GHz 1W stacked-FET GaAs MMIC power amplifier

Yu¹,

Li²,

Liu³

et al. 2022

IEICE Electron. Express

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In this letter, a 30 MHz-3 GHz 1 W ultra-broadband stacked power amplifier (PA) fabricated in 0.25 um GaAs pHEMT technology process is presented. By inserting an RC network between the bridge-T input lossy matching network and the stacked-FET, the stability enhancement and input standing wave ratio (SWR) optimization are achieved with high frequency gain compensation. Based on the performance simulations of the stacked-PA with various normalized output load impedance, an optimal output matching method is applied, which obtains 31±1 dBm output power at 15 dBm input power, while the peak PAE achieves 60.2% at 30 MHz and the PAE larger than 35% over all of the operating frequency band. Moreover, the size of MMIC PA achieves 1.51 mm 2 with 50 Ω input and output matching.

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Section: Circuit Designmentioning

confidence: 99%

A 30MHz-3GHz 1W stacked-FET GaAs MMIC power amplifier

Yu¹,

Li²,

Liu³

et al. 2022

IEICE Electron. Express

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“…Resistive feedback technique is another design method for a broadband power amplifier, which provides broadband performance and high stability. However, efficiency performances of these amplifiers reported have been typically low …”

Section: Power Amplifier Design and Fabricationmentioning

confidence: 99%

A broadband RLC matched GaN power amplifier using interposer‐MMIC technology

Yoon

Yook

Kim

et al. 2020

Micro & Optical Tech Letters

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In this article, we report a compact and low‐profile GaN‐based broadband power amplifier using silicon interposer‐MMIC (iMMIC) technology. The iMMIC technology enables a GaN HEMT to be embedded in the silicon substrate, and passive circuit elements such as metal‐insulator‐metal (MIM) capacitors, spiral inductors, and thin film resistors to be implemented on the high‐resistivity silicon (HRS) substrate using standard integrated passive device (IPD) process, so that the final power amplifier is almost indistinguishable from a single GaN MMIC power amplifier. The RLC matched all‐pass network and LC ladder type low‐pass network are employed as the input matching network and output matching network, respectively. The proposed power amplifier has a Psat of 39.1 to 39.2 dBm with a power‐added efficiency (PAE) of 40% to 50.5% in the frequency range of 2.1 to 3.5 GHz under continuous wave (CW) input signal. The proposed iMMIC power amplifier occupies only 9.9 mm2.

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“…Several approaches have been taken to implement broadband PAs using GaN HEMTs ranging from unmatched transistors with PCB level matching [7] to full MMIC PA's [8]. As an alternative, a multi-chip module approach is utilized consisting of GaN-on-SiC die packaged with GaAs integrated passive circuits (IPCs) [9]. The passive chips include the matching, stabilization, and bias decoupling components while the GaN device is limited to primarily the active device area.…”

Section: A Power Ic's Multi-chip Module Amplifiersmentioning

confidence: 99%

Optimization of Gallium nitride high power technology for commercial and military applications

Shealy¹,

Lefevre²,

Anderson³

et al. 2009

2009 IEEE Bipolar/BiCMOS Circuits and Technology Meeting

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Next generation commercial and military systems require high power amplifiers (HPAs) with superior performance such as higher efficiency, improved thermal performance, wider bandwidth and higher output power. Using an optimized 0.5um, 48V GaN-on-SiC process, a family of GaN power amplifiers are developed for applications in the frequency range of 30MHz to 4GHz and output power ranging from 8W to 500W.Such devices clearly demonstrate superior power-bandwidth product of GaN for military applications such as radar, military communications and electronic warfare. For commercial applications, a family of linear amplifiers, applicable to 3GPP, LTE and WiMax cellular base stations, offer high efficiency operation. Finally, an optimized GaN process is utilized to develop new cable TV power doubler modules offering 6dB improvement in CIN performance over incumbent GaAs based amplifiers.

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RLC Matched GaN HEMT Power Amplifier with 2 GHz Bandwidth

Cited by 8 publications

References 20 publications

A 30MHz-3GHz 1W stacked-FET GaAs MMIC power amplifier

A 30MHz-3GHz 1W stacked-FET GaAs MMIC power amplifier

A broadband RLC matched GaN power amplifier using interposer‐MMIC technology

Optimization of Gallium nitride high power technology for commercial and military applications

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