Optimization of Gallium nitride high power technology for commercial and military applications

Shealy, J.B.; Lefevre, M.; Anderson, Bobby; Runton, D.; Poulton, Matthew; Martin, Jan M. L.

doi:10.1109/bipol.2009.5314127

Cited by 5 publications

(2 citation statements)

References 11 publications

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“…However, a reduction in RF loss is essential because capacitance against ground is larger than the HR Si substrate at the low temperature side. This RF loss is the substrate loss through expressed by (2). The method to reduce RC loss is to make substrate resistance small and to reduce , as indicated in Fig.…”

Section: Device Structure Optimization Of Gan On Lr Simentioning

confidence: 99%

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

Takenaka

Ishikura

Asano

et al. 2014

IEEE Trans. Microwave Theory Techn.

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We have successfully developed high-efficiency and high-power microwave amplifiers using a GaN field-effect transistor (FET) on a low-resistivity (LR) Si substrate for the first time. By introducing the LR Si substrate whose resistivity is less sensitive over temperature, the efficiency characteristics in high-temperature operation were significantly improved. In order to overcome the RF loss increase due to the utilization of the LR Si substrate, we have optimized the device structure of the FET by using an RC loss model accounting for drain-to-source capacitance and substrate resistance. High-efficiency characteristics were realized by optimizing the buffer structure and electrode structure. Furthermore, we have investigated efficiency improvement by second harmonic termination. The developed single-ended amplifier realized the saturation output power of 54 dBm, the linear gain (GL) of 19 dB, and the high efficiency of 33.5% at 8-dB back-off output power level under a WCDMA signal condition of 2.14 GHz at 50-V operation. The inverted Doherty amplifier using a pair of the 250-W GaN FETs delivered the of 57.3 dBm with the GL of 15.5 dB under a pulsed continuous wave signal condition of 2.14 GHz, and demonstrated the digital pre-distortion linearization characteristics with the high efficiency of 48% and the adjacent channel leakage power ratio of 55 dBc at 50 dBm. These results are comparable to the best performance among the ever reported GaN on SiC FET high-power amplifiers.Index Terms-GaN field-effect transistor (FET), high efficiency, high power, high temperature, inverted Doherty amplifier, microwave amplifiers, resistivity, second harmonic, Si substrate.

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Section: Device Structure Optimization Of Gan On Lr Simentioning

confidence: 99%

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

Takenaka

Ishikura

Asano

et al. 2014

IEEE Trans. Microwave Theory Techn.

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“…The developments of the CATV power amplifier module using the GaN field-effect transistors (FETs) of high-voltage operation have been carried out for high-power performance [1], [2]. In the previous report of the CATV amplifier using GaN FETs, the distortion characteristics improvement was performed by the linearization of the gate-to-drain capacitance (C gd ) due to the AlN mole fraction of the epitaxial layer in the GaN FETs [1].…”

Section: Introductionmentioning

confidence: 99%

Broadband Distortion Cancellation Technique in GaAs HJFET and GaN FET Cascode Amplifier

Takenaka

Takahashi

et al. 2014

IEEE Trans. Electron Devices

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This paper describes broadband distortion cancellation technique in the cascode configuration composed of GaAs heterojunction field-effect transistor (HJFET) for the first stage and AlGaN/GaN heterojunction FET (HJFET), for the final stage to realize broadband low-distortion cable television (CATV) power amplifier. The device structures of GaAs HJFET and GaN FET were optimized using the Volterra distortion analysis on a load-line. The transconductance gm-profile on a load-line of the first-stage GaAs HJFET was designed to obtain the gain expansion at near Class-A operation to cancel the gain compression of the final-stage GaN FET. The gate-orientation of GaAs HJFET was optimized to achieve low distortion at lower current condition. The field-plate electrode structure of the final-stage GaN FET was optimized to improve the highfrequency distortion characteristics by reducing the capacitance nonlinearity on a load-line. The developed CATV power amplifier demonstrated low composite triple beat characteristics less than −72 dBc at low drain current condition of 380 mA under 53.7 dBmV at 865 MHz, 11.7-dB tilt, and 132 channels. Index Terms-AlGaN/GaN heterostructure field-effect transistor (HFET), cable television (CATV), capacitance nonlinearity, cascode, composite triple beat (CTB), distortion cancellation, GaAs heterojunction FET (HJFET), gate-orientation, gm-profile, load-line, low distortion, power amplifiers.

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Microwave power amplifiers

Colantonio

Cipriani

Giannini

2016

Microwave Wireless Communications

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Optimization of Gallium nitride high power technology for commercial and military applications

Cited by 5 publications

References 11 publications

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

High-Efficiency and High-Power Microwave Amplifier Using GaN-on-Si FET With Improved High-Temperature Operation Characteristics

Broadband Distortion Cancellation Technique in GaAs HJFET and GaN FET Cascode Amplifier

Microwave power amplifiers

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