2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P&lt;inf&gt;1dB&lt;/inf&gt; and 74mW P&lt;inf&gt;DC&lt;/inf&gt;

Larie, Aurélien; Kerhervé, Eric; Martineau, Baudouin; Vogt, Lionel; Belot, Didier

doi:10.1109/isscc.2015.7062919

Cited by 26 publications

(14 citation statements)

References 3 publications

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“…In particular, [136] reports a 16way T-line power combiner on 3-stage single-ended PA cores in 90 nm SiGe which achieves 27.3 dBm saturated power, 22.3 dBm power at 1 dB compression and 12.4% PAE with a 1.8 V supply. There are also explorations on the distributed active transformer (DAT) for series power combining that is especially useful for PAs using low-voltage silicon devices [138], [139]. However, using transformer magnetic coupling for DAT combiners fundamentally needs "circular-shape" output arrangement and results in substantially complicated input signal distribution, low area-efficiency, and limited scalability on the number of combining paths.…”

Section: Dbm Saturated Power and 25 Db Gain At 60 Ghzmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

128

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This paper reviews the state-of-the-art of millimeterwave power amplifiers, focussing on broadband design techniques. An overview of the main solid-state technologies is provided, including Si, GaAs, GaN and other III-V materials, and both field-effect and bipolar transistors. The most popular broadband design techniques are introduced, before critically comparing through the most relevant design examples found in the scientific literature. Given the wide breadth of applications that are foreseen to exploit the millimeter-wave (mm-wave) spectrum, this contribution will represent a valuable guide for designers who need a single reference before adventuring in the challenging task of mm-wave power amplifier design. Index Terms-Broadband, millimeter wave, power amplifiers. I. INTRODUCTION T HE millimeter-wave (mm-wave) spectrum is attracting a great interest for applications such as 5G and future satellite communications that go well beyond the traditional niche of military and scientific use in terms of investments and potential revenues. The most attractive feature of mm-waves compared to the RF and microwave band is the huge spectrum availability that gives a great advantage in terms of capacity for telecommunication systems. Other advantages of mm-wave systems are the compact size of circuits, especially antennas, and the intrinsic easiness of frequency reuse thanks to the high free-space attenuations. There are also some advantages that are band-specific; for example, the very high attenuation in the 60 GHz band due to oxygen absorption that enables intrinsically secure communications. On the other hand, the very high frequency of operation poses significant challenges to system and circuit design. Similarly to what happens at lower frequency, one of the most critical circuit components is the power amplifier (PA). Its

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Section: Dbm Saturated Power and 25 Db Gain At 60 Ghzmentioning

confidence: 99%

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

Camarchia

Quaglia

Piacibello

et al. 2020

IEEE Trans. Microwave Theory Techn.

128

View full text Add to dashboard Cite

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“…One realization in 28 nm CMOS is the dual-mode PA presented in [11]. It achieves the highest reported gain when operating in high gain mode and the highest OCP 1dB in the high linearity mode.…”

Section: Comparison With the State-of-the-artmentioning

confidence: 99%

“…For sub-65 nm CMOS technologies, fewer 60-GHz power amplifiers have been published yet. For the 28-nm node, specifically the circuits in [10] and [11] have been reported to this point. Whilst the limitation on the supported voltage levels over the transistors become more stringent, the technological evolution has allowed significant improvement on the frequency performance of the devices, allowing higher gain levels at mm-waves.…”

Section: Introductionmentioning

confidence: 99%

12 dBm OCP1dB Millimeter-wave 28 nm CMOS Power Amplifier using Integrated Transformers

Leite¹,

Kerhervé²,

Belot³

2020

JICS

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This paper describes the design of mm-wave integrated transformers and their application within a power amplifier (PA) in a 28 nm CMOS technology. The PA presents a 2-stage common-source differential topology and uses one transformer at the input and another at the output to perform single-ended to differential conversion, as well as another transformer to perform interstage matching. The baluns are sized to provide low insertion losses and high common-mode rejection rate (CMRR) as well as integrating the input and output matching networks. The designed baluns achieve minimum insertion losses better than 0.8 dB and CMRR superior to 27 dB. The output-stage transistors have a measured 1 dB output compression point (OCP1dB) of 10.2 dBm, 10.1 dB gain and peak power added efficiency (PAE) as high as 35%. Thanks to the transformers, the PA presents a compact implementation, occupying only 0.037 mm² on silicon. The fabricated PA achieves 12 dBm OCP1dB, 15.3 dB gain and peak PAE better than 20%.

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“…Therefore, when N ANT equals 16, the maximum P PA,out is limited to 19 dBm, and the maximum P PA,out will increase to 25 dBm if N ANT is set to 8. The specification of 19 dBm output power is less challenging and more implementable according to the current state-of-the-art mmWave PA designs [48], [49].…”

Section: B Uplink Budget and Data Throughput Analysismentioning

confidence: 99%

5G Cellular User Equipment: From Theory to Practical Hardware Design

2017

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Research and development on the next generation wireless systems, namely 5G, has experienced explosive growth in recent years. In the physical layer (PHY), the massive multiple-input-multiple-output (MIMO) technique and the use of high GHz frequency bands are two promising trends for adoption. Millimeter-wave (mmWave) bands such as 28 GHz, 38 GHz, 64 GHz, and 71 GHz, which were previously considered not suitable for commercial cellular networks, will play an important role in 5G. Currently, most 5G research deals with the algorithms and implementations of modulation and coding schemes, new spatial signal processing technologies, new spectrum opportunities, channel modeling, 5G proof of concept (PoC) systems, and other system-level enabling technologies. In this paper, we first investigate the contemporary wireless user equipment (UE) hardware design, and unveil the critical 5G UE hardware design constraints on circuits and systems. On top of the said investigation and design trade-off analysis, a new, highly reconfigurable system architecture for 5G cellular user equipment, namely distributed phased arrays based MIMO (DPA-MIMO) is proposed. Finally, the link budget calculation and data throughput numerical results are presented for the evaluation of the proposed architecture.Comment: Submitted to IEEE ACCESS. It has 18 pages, 17 figures, and 5 table

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2.10 A 60GHz 28nm UTBB FD-SOI CMOS reconfigurable power amplifier with 21% PAE, 18.2dBm P<inf>1dB</inf> and 74mW P<inf>DC</inf>

Cited by 26 publications

References 3 publications

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

A Review of Technologies and Design Techniques of Millimeter-Wave Power Amplifiers

12 dBm OCP1dB Millimeter-wave 28 nm CMOS Power Amplifier using Integrated Transformers

5G Cellular User Equipment: From Theory to Practical Hardware Design

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