193 nm Immersion Lithography-Taking the Plunge

Dammel, Ralph R.; Houlihan, F. M.; Sakamuri, Raj; Rentkiewicz, David; Romano, Andrew

doi:10.2494/photopolymer.17.587

Cited by 30 publications

(17 citation statements)

References 7 publications

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“…2,3 First proposed in the 1980's, 1-3 immersion lithography was not seriously considered until recently, 4 but has now become the primary technology plan for reaching the 45 nm node of the International Technology Roadmap for Semiconductors. 5,6 Water has been proposed as the ideal immersion fluid to be coupled with current 193 nm lithography technology because of its compatibility with current manufacturing techniques, its low absorbance (α 193 = 0.036 cm -1 base 10), 7 and high refractive index (n 193 = 1.437). 8 One of the initial concerns about incorporating water into the lithographic process was the potential effects of direct contact between the water and a photoresist film.…”

Section: Introductionmentioning

confidence: 99%

Understanding the photoresist surface-liquid interface for ArF immersion lithography

Conley¹,

LeSuer

Fan

et al. 2005

SPIE Proceedings

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Extraction of small molecule components into water from photoresist materials designed for 193 nm immersion lithography has been observed. Leaching of photoacid generator (PAG) has been monitored using three techniques: liquid scintillation counting (LSC); liquid chromatography mass spectrometry (LCMS); and scanning electrochemical microscopy (SECM). LSC was also used to detect leaching of residual casting solvent (RCS) and base. The amount of PAG leaching from the resist films, 30 -50 ng/cm 2 , was quantified using LSC. Both LSC and LCMS results suggest that PAG and photoacid leach from the film only upon initial contact with water (within 10 seconds) and minimal leaching occurs thereafter for immersion times up to 30 minutes. Exposed films show an increase in the amount of photoacid anion leaching by upwards of 20% relative to unexposed films. Films pre-rinsed with water for 30 seconds showed no further PAG leaching as determined by LSC. No statistically significant amount of residual casting solvent was extracted after 30 minutes of immersion. Base extraction was quantified at 2 ng/cm 2 after 30 seconds. The leaching process is qualitatively described by a model based on the stratigraphy of resist films.

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Section: Introductionmentioning

confidence: 99%

Understanding the photoresist surface-liquid interface for ArF immersion lithography

Conley¹,

LeSuer

Fan

et al. 2005

SPIE Proceedings

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“…One possible solution to the above described issues is the use of top barrier coating. [51] Such coatings isolate the resist layer from the immersion medium, and thus can make it possible to use existing resist formulations with minimal formulation optimization. Other challenges for the extension of 193 nm immersion lithography include collapse behavior of patterns at small feature size, contamination from higher refractive index immersion media other than water, as well as issues caused by ever rising requirements along the roadmap, e.g., specifications for line width roughness, post-exposure bake (PEB) sensitivity, defectivity, etc.…”

Section: Nm Immersion Lithographymentioning

confidence: 99%

The convergence of top-down and bottom-up nanofabrication: formation of 3D structures

Yang

Dai

et al. 2005

SPIE Proceedings

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Lithography and the processes associated with it are the backbone of the nanotechnology revolution. Several developments are occurring simultaneously: a drive to reduce minimum feature size leading to advances in microelectronics, the use of lithographically patterned structures to prepare devices for photonics, biotechnology and other forms of nanotechnology and finally the drive to create three-dimensional (3D) structures for device and new materials creation. Thus the controlled formation of nanometer scale structures in two and three dimensions is of increasing interest in many applications. This paper will overview new approaches for the construction of small-scale structures using methods generally considered as next generation lithography. New approaches derived from two photon processes for the formation of complex images and the development of patterned structures will be described. Finally in the production of 3D patterns, the possible role of self-assembly coupled to lithography will be examined. Photodefinable block copolymers with erodable microstructures have been successfully used to form mesoporous materials and will be discussed.

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“…1 While immersion-specific optimization and tweaking will undoubtedly be required, it is anticipated that the existing monomers, such as the various adamantane derivatives and lactones commonly used in 193 nm dry lithography, will also form the basis for 193 nm immersion photoresists. The stable of monomers used in this platform may possibly be augmented by fluoroalcohol-substituted derivatives, but if this development should come about, it would also be expected to occur in 193 nm dry lithography.…”

Section: Introductionmentioning

confidence: 99%

Resist component leaching in 193-nm immersion lithography

et al. 2005

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The leaching of ionic PAGs from model resist films into a static water volume is shown to follow first order kinetics. From the saturation concentration and the leaching time constant, the leaching rate at time zero is obtained which is a highly relevant parameter for evaluating lens contamination potential. The levels of leaching seen in the model resists generally exceed both static and ratebased dynamic leaching specifications. The dependence of leaching on anion structure shows that more hydrophobic anions have lower saturation concentration; however, the time constant of leaching increases with anion chain length. Thus in our model system, the initial leaching rates of nonaflate and PFOS anions are identical. Investigation of a water pre-rinse process unexpectedly showed that some PAG can still be leached from the surface although the pre-rinse times greatly exceeded the times required for saturation of the leaching phenomenon, which are expected to correspond to complete depletion of leachable PAG from the surface. A model is proposed to explain this phenomenon through re-organization of the surface as the surface energy changes during the air/water/air contact sequence of the pre-rinse process.

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193 nm Immersion Lithography-Taking the Plunge

Cited by 30 publications

References 7 publications

Understanding the photoresist surface-liquid interface for ArF immersion lithography

Understanding the photoresist surface-liquid interface for ArF immersion lithography

The convergence of top-down and bottom-up nanofabrication: formation of 3D structures

Resist component leaching in 193-nm immersion lithography

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