12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates

Silicon-Germanium Strained Layer Materials in Microelectronics

“…[91] While the ultimate speeds for these low power devices may not be as fast as some competitive technology, access times less than 1 ns have been predicted for complete memory cells at large levels of integration. Logic circuits operating at over 12 GHz for 20±48 mm 2 lithographic feature sizes [92] have also been demonstrated experimentally, where logic operations are defined by relative device sizes, [93] allowing simplified layouts for circuits. The potential for scaling such devices to lower power and higher speeds is enormous.…”

Circuit and application aspects of tunnelling devices in a MOBILE configuration

“…This logic input stage can be used to implement a variety of di erent logic schemes, such as conventional Boolean logic, threshold logic, and multiple-valued logic [19]. Depending on the speciÿc device technology the input stage is composed of HFET's [15], surface tunnelling transistors [20], RTD-Schottky diode combinations [17], or RTBTs [21].…”

“…In recent years, high-speed logic families based on the MOBILE have been proposed for tunnelling devices [11,[15][16][17]. The MOBILE gate is a pseudo-dynamic, clocked logic circuit and consists of two resonant tunnelling diodes which are operated in a monostable or bistable state depending on a pulsed power supply voltage (clock).…”

Digital circuit applications of resonant tunneling devices

“…Williamson et al [48] report the demonstration of a functionally complete set of logic gates using resonant interband tunneling diodes (RITD's) and Schottky diodes, operating at a frequency of 12 GHz. The RITD is structurally similar to an RTD; however, it has a different bandgap alignment than an RTD.…”