1999
DOI: 10.1590/s0103-97331999000400005
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Nonlinear spatio-temporal dynamics in semiconductors

Abstract: We review recent theoretical advances in the modeling and computer simulation of complex nonlinear spatio-temporal dynamics of charge carriers in semiconductors. Among the particularly instructive examples are investigations of current laments in doped semiconductors in the regime of low temperature impurity breakdown. The nascence of current laments in thin GaAs lms with di erent contact geometries, including circular samples Corbino disks with symmetry breaking instabilities, is investigated, and the role of… Show more

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Cited by 3 publications
(4 citation statements)
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“…Several explanations of the back‐bending were proposed including formation of current filaments 21, 37 or a Mott metal–insulator transition 19. Recently, the s‐shaped IVs were observed in InO x amorphous films 41.…”
Section: Anbno3n+2 Current–voltage Characteristicsmentioning
confidence: 99%
See 1 more Smart Citation
“…Several explanations of the back‐bending were proposed including formation of current filaments 21, 37 or a Mott metal–insulator transition 19. Recently, the s‐shaped IVs were observed in InO x amorphous films 41.…”
Section: Anbno3n+2 Current–voltage Characteristicsmentioning
confidence: 99%
“…Such behavior is also called a resistive switching 19, 20 as a sharp change of resistance takes place at a threshold voltage. In other words, current–voltage characteristics (IV) is of a specific type, which is often called an s‐shaped IV 21, 22. We analyze both types of resistive switching.…”
Section: Introductionmentioning
confidence: 99%
“…Impact ionization is a process in which a charge carrier with high kinetic energy collides with a second charge carrier, transferring its kinetic energy to the latter which is hereby lifted to a higher energy level. The result of the process is carrier multiplication which may induce electrical instabilities at sufficiently high external electric fields [8]. With impact ionization, the absorbed energy remains in the electron-hole system, but is more uniformly distributed over a larger number of electrons and holes than were originally generated by the absorption of the photons.…”
Section: Brief Description Of the Impact Ionization Phenomenonmentioning
confidence: 99%
“…Semiconductors, in some ways are complex nonlinear dynamic systems which give rise to a variety of current instabilities when they are driven by strong electric field [8,11,12]. Many of these current instabilities often lead to chaotic current oscillations and current filamentation [13][14][15][16][17][18][19][20].…”
Section: Brief Description Of the Impact Ionization Phenomenonmentioning
confidence: 99%