Resistive memory switching in layered oxides: A_nB_nO_3n+2 perovskite derivatives and Bi₂Sr₂CaCu₂O_8+δ high‐T_c superconductor

Abstract

Resistive memory switching was investigated in titanates and niobates of the type AnBnO3n+2 and in the high‐Tc superconductor Bi2Sr2CaCu2O8+δ. We studied the switching by current injection perpendicular to the layers. Both dc and pulsed measurements were performed. Out‐of‐plane transport properties were investigated by measurements of the resistance and current–voltage characteristics (IVs) vs. temperature for different resistive states. The critical temperature of superconducting transition and the critical current of intrinsic Josephson junctions were also analyzed for different resistive states in Bi2Sr2CaCu2O8+δ. The resistive memory switching was explained in terms of doping of the conducting layers, which is induced by trapped charges in the insulating layers. The charged insulating layers act as a floating gate and reduce or increase the carrier concentration in the conducting layers, respectively. We found that all studied materials demonstrate a different type of non‐persistent resistive switching at low temperatures. This type of switching shows up in a specific form of current–voltage characteristics with a pronounced back‐bending often called s‐shaped IV. Both types of resistive switching with and without memory effect were analyzed in terms of electron overheating. We examine the role of hot electrons and discuss additional factors, which might lead to persistent resistive states.

Persistent electrical doping of Bi2Sr2CaCu2OMotzkau1, Jacobs2, Katterwe3 et al. 2012Phys. Rev. B131100View full textAdd to dashboardCite

“…In case of cuprates, physical doping may be persistent at low temperatures in a sense that it is relaxing very slowly after removing the light [17,18] or field [21,[23][24][25]. Recently, a persistent electric doping via strong current injection was discovered [24,25]. It is resembling a resistive switching phenomenon in memristor devices [26,27] and is related to previous similar observations in point contact experiments on Bi 2 Sr 2 CaCu 2 O 8+x (Bi-2212) [23].…”

“…Koval et.al. [25] demonstrated that a short-pulse doping strategy leads to highly reversible and reproducible doping, similar to resistive switching in point contacts [23]. This is probably related to the lack of significant electromigration during the short pulse, which may eventually lead to an irreversible destruction of the crystal structure [21].…”

“…Resistive switching has been observed on depleted surfaces of Bi-2212 cuprates [23] and attributed to oxygen migration. Recently, it was demonstrated that the resistive switching-like phenomenon can be used for controllable and reversible doping of small Bi-2212 microstructures over a wide doping range [24,25] and with a different number of junctions N = 8−56 were studied. Details of the sample fabrication can be found in Ref.…”

“…The carrier concentration can be also varied via two physical doping processes, well established for semiconductors: photo-doping [17][18][19] and through the electric-field effect [20][21][22][23][24][25]. In case of cuprates, physical doping may be persistent at low temperatures in a sense that it is relaxing very slowly after removing the light [17,18] or field [21,[23][24][25].…”

“…In case of cuprates, physical doping may be persistent at low temperatures in a sense that it is relaxing very slowly after removing the light [17,18] or field [21,[23][24][25]. Recently, a persistent electric doping via strong current injection was discovered [24,25].…”