Resistive memory switching was investigated in titanates and niobates of the type AnBnO3n+2 and in the high‐Tc superconductor Bi2Sr2CaCu2O8+δ. We studied the switching by current injection perpendicular to the layers. Both dc and pulsed measurements were performed. Out‐of‐plane transport properties were investigated by measurements of the resistance and current–voltage characteristics (IVs) vs. temperature for different resistive states. The critical temperature of superconducting transition and the critical current of intrinsic Josephson junctions were also analyzed for different resistive states in Bi2Sr2CaCu2O8+δ. The resistive memory switching was explained in terms of doping of the conducting layers, which is induced by trapped charges in the insulating layers. The charged insulating layers act as a floating gate and reduce or increase the carrier concentration in the conducting layers, respectively. We found that all studied materials demonstrate a different type of non‐persistent resistive switching at low temperatures. This type of switching shows up in a specific form of current–voltage characteristics with a pronounced back‐bending often called s‐shaped IV. Both types of resistive switching with and without memory effect were analyzed in terms of electron overheating. We examine the role of hot electrons and discuss additional factors, which might lead to persistent resistive states.
Micro plasma devices (MPD) with power gains are of interest in applications involving operations in the presence of ionizing radiations, in propulsion, in control, amplification of high power electromagnetic waves, and in metamaterials for energy management. Here, we review and discuss MPDs with an emphasis on new architectures that have evolved during the past seven years. Devices with programmable impact ionization rates and programmable boundaries are developed to control the plasma ignition voltage and current to achieve power gain. Plasma devices with 1-10 µm gaps are shown to operate in the sub-Paschen regime in atmospheric pressures where ion-assisted field emission results in a breakdown voltage that linearly depends on the gap distance in contrast to the exponential dependence dictated by the Paschen curve. Small gap devices offer higher operation frequencies at low operation voltages with applications in metamaterial skins for energy management and in harsh environment inside nuclear reactors and in space. In addition to analog plasma devices, logic gates, digital circuits, and distributed amplifiers are also discussed.
We report the design, fabrication and electrical characterization of novel three dimensional Micro-plasma Field Effect Transistor (MOPFET) devices that operate inside atmospheric RF helium plasma. Current versus voltage characterization of MOPFETs are demonstrated in this paper. High transconductance and reliable gate control over I ds can be obtained from coplanar and 3D MOPFETs. COMSOL simulation is used here to demonstrate the operation principles of MOPFETs. For micro-plasma FETs electrons and ions act as charge carriers to conduct current, instead of electrons and holes, as in, traditional semiconductor FETs. Therefore, MOPFETs have advantages over semiconductor FETs in extreme conditions, such as at high temperatures and in high ionizing radiation such as applications in space exploration and in distressed nuclear reactors.
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