Experimental study of negative differential conductivity in GaAs:Cr

Rubinger, R. M.; Oliveira, A. G. de; Bezerra, J. C.; Rodrigues, Wagner Nunes; Moreira, M. V. B.

doi:10.1103/physrevb.62.1859

Cited by 7 publications

(2 citation statements)

References 20 publications

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“…On the other hand, the nonlinear characteristic of the SI GaAs cathode which is electrically interfaced/coupled with gas discharge structure is also investigated. The presence of the negative differential conductivity (NDC) in SI GaAs cathode is associated with instabilities of a homogeneous steady state produced by spatial fluctuations in the electric field or in the carrier density [25]. The transport properties of a semiconductor device present instabilities such as current runaway, current oscillations, discontinuities in the current and/or voltage, switching and hysteretic current-voltage phenomena.…”

Section: Introductionmentioning

confidence: 99%

Memory effect in semiconductor gas discharge electronic devices

Sadiq¹,

Kurt²,

Salamov³

2008

J. Phys. D: Appl. Phys.

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The memory effect in the planar semiconductor gas discharge system at different pressures (15–760 Torr) and interelectrode distances (60–445 µm) was experimentally studied. The study was performed on the basis of current–voltage characteristic (CVC) measurements with a time lag of several hours of afterglow periods. The influence of the active space charge remaining from the previous discharge on the breakdown voltage (UB) has been analysed using the CVC method for different conductivities of semiconductor GaAs photocathode. CVC showed that even a measurement taken 96 h after the first breakdown was influenced by accumulated active particles deposited from the previous discharge. Such phenomena based on metastable atoms surviving from the previous discharge and recombined on the cathode to create initial electrons in the avalanche mechanism are shown to be fully consistent with CVC data for both pre-breakdown and post-breakdown regions. However, in the post-breakdown region pronounced negative differential conductivity was observed. Such nonlinear electrical property of GaAs is attributed to the existence of deep electronic defect called EL2 in the semiconductor cathode material. On the other hand, the CVC data for subsequent dates present a correlation of memory effect and hysteresis behaviour. The explanation for such a relation is based on the influence of long lived active charges on the electronic transport mechanism of semiconductor material.

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Section: Introductionmentioning

confidence: 99%

Memory effect in semiconductor gas discharge electronic devices

Sadiq¹,

Kurt²,

Salamov³

2008

J. Phys. D: Appl. Phys.

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show abstract

“…Analytical expression for the steady state ambipolar transport, including generation/recombination, diffusion current and field dependent mobilities, is elusive but for very specific physical cases. Experimental [6-9,17,21,24-26], analytical [24,[26][27][28][29][30] and numerical results [6][7][8][9][31][32][33] have been obtained either in the steady state or for time dependent transport under dc voltage bias or constant current bias. These results deal mainly with unipolar transport in N type SC.…”

Section: Discussionmentioning

confidence: 99%