Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates

Silva-López, H.; Marcelino, Becerril Silva; Guillén-Cervantes, A.; Zelaya-Ángel, O.; Ramı́rez-Bon, R.

doi:10.1590/1980-5373-mr-2018-0224

Cited by 13 publications

(10 citation statements)

References 28 publications

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“…Typically, a higher Φ TC indicates an increased performance for transparent conducting films. The Φ TC for the IMO/AZO/mica structure with various thicknesses, IMO films 17,20,21,[23][24][25][26][27][28][29][30][31][32][33][34] and numerous TCO films on flexible substrates 14,[35][36][37][38][39][40][41][42][43][44] are shown in Fig. 3b.…”

Section: Resultsmentioning

confidence: 99%

Flexible transparent heteroepitaxial conducting oxide with mobility exceeding 100 cm2 V−1 s−1 at room temperature

et al. 2020

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Flexible and transparent applications have become an emerging technology and have shifted to the forefront of materials science research in recent years. Transparent conductive oxide films have been applied for flat panel displays, solar cells, and transparent glass coatings. However, none of them can fulfill the requirements for advanced transparent flexible devices, such as high-frequency applications. Here, we present a promising technique for transparent flexible conducting oxide heteroepitaxial films: the direct fabrication of epitaxial molybdenum-doped indium oxide (IMO) thin films on a transparent flexible muscovite substrate. An n-type epitaxial IMO film is demonstrated with a mobility of 109 cm2 V−1 s−1, a figure of merit of 0.0976 Ω−1, a resistivity of 4.5 × 10−5 Ω cm and an average optical transmittance of 81.8% in the visible regime. This heteroepitaxial system not only exhibits excellent electrical and optical performance but also shows excellent mechanical durability. Our results illustrate that this is an outstanding way to fabricate transparent and flexible conducting elements for the evolution and expansion of next-generation smart devices.

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Section: Resultsmentioning

confidence: 99%

Flexible transparent heteroepitaxial conducting oxide with mobility exceeding 100 cm2 V−1 s−1 at room temperature

et al. 2020

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“…Some of the studies related to In doped ZnO films grown by different techniques were analyzed, and IZO main features were reported in Table 1. [36] Pyrosol method ~49; ~62 -1.3 × 10 −2 ; 3.0 × 10 -3 Silva-Lopez et al [21] RF magnetron sputtering 16.4; 16.0 3.2 ± 0.1 2.9 ± 0.7 × 10 −3 Rambu et al [37] Thermal evaporation 29; 24 According to the studies reported in Table 1, the characteristics of ZnO depend on both growth technique and In doping content. In other words, ZnO, which is characterized by the hexagonal wurtzite structure, may exhibit different characteristics due to defects such as zinc interstitials and oxygen vacancies, which depend on the growth technique and growth parameters.…”

Section: Resultsmentioning

confidence: 99%

“…This means that ZnO has a very wide range of applications. Nevertheless, the bibliometric analysis evidenced high interest towards Al doped ZnO (AZO), which is the most investigated ITO alternative, and In was selected in this review as the ZnO dopant, because it has the advantage of less reactivity and higher oxidation resistance than other additives of the same group [21]. Indium is, at present, listed among CRMs, however its content in indium doped zinc oxide (IZO) is quite low with respect to ITO.…”

Section: Introductionmentioning

confidence: 99%

A Bibliometric Analysis of the Publications on In Doped ZnO to be a Guide for Future Studies

Yılmaz

Grilli

Turgut

2020

Metals

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This study aims to examine the studies regarding In doped ZnO published in the Web of Science database. A total of 777 articles were reached (31 March 2020). The articles were downloaded for the bibliometric analysis and collected in a file. The file was uploaded to VOSViewer programme in order to reveal the most used keywords, words in the abstracts, citation analyses, co-citation and co-authorship and countries analyses of the articles. The results showed that the most used keywords were “ZnO”, “photoluminescence”, “optical properties”, “thin films” and “doping”. These results indicate that the articles mostly focus on some characteristics of In doped ZnO thin films such as structural, optical and electrical features. When the distribution of the number of articles using the keywords by year was searched, it was found that recent articles focus mainly on synthesis of In doped ZnO film via chemical routes such as sol-gel and hydrothermal syntheses, and on ZnO-based device applications such as solar cells and gas sensors. The most used keywords were also found to be films, X-ray, glass substrate, X-ray Diffraction (XRD), spectra and layer. These results indicate that the studies mostly focus on In doped ZnO thin films as transparent conductive oxide (TCO) material used in device applications like solar cells. In this context, it was found that structural, topographical, optical, electrical and magnetic properties of In doped ZnO films were characterized in terms of defected structure or defect type, substrate temperature, film thickness and In doping content. When the distribution of these words is shown on a year-by-year basis, it is evident that more recent articles tend to focus both on efficiency and performance of In doped ZnO films as TCO in solar cells, diodes and photoluminescence applications both on nanostructures, such as nanoparticles, and nanorods for gas sensor applications. The results also indicated that Maldonado and Asomoza were the most cited authors in this field. In addition, Major, Minami and Ozgur were the most cited (co-citation) authors in this field. The most cited journals were found to be Thin Solid Films, Journal of Materials Science Materials in Electronics and Journal of Applied Physics and, more recently, Energy, Ceramics International, Applied Physics-A, Optik, Material Research Express, ACS Applied Materials and Interfaces and Optical Materials. The most co-cited journals were Applied Physics Letters, Thin Solid Films, Journal of Applied Physics, Physical Review B, and Applied Surface Science. Lastly, the countries with the highest number of documents were China, India, South Korea, USA and Japan. Consequently, it is suggested that future research needs to focus more on synthesis and characterization with different growth techniques which make In doped ZnO suitable for device applications, such as solar cells and diodes. In this context, this study may provide valuable information to researchers for future studies on the topic.

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“…Among these methods, RF magnetron sputtering is an excellent method due to its ability to coat heat-sensitive substrates, high-purity films, dense pore-free coating, and good adhesion (30 MPa) [28,29]. However, the IZO film seems to be problematic since it is based only on RF magnetron sputtering with surface roughness, easy cracks, and uneven surface or edge [30].…”

Section: Introductionmentioning

confidence: 99%

High Performance of IZO Coated on PET Substrate for Electroluminescence Device Using Oxygen Plasma Treatment

Poonthong

Mungkung

Arunrungrusmi

et al. 2021

International Journal of Photoenergy

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Thin films of indium zinc oxide (IZO) were deposited on polyethylene terephthalate (PET) substrate with varying plasma power (from 100 W to 300 W) using the radio-frequency (RF) magnetron sputtering technique and electroluminescence (EL) devices. The IZO films that were obtained from this process were treated with oxygen plasma powers using the plasma-enhanced chemical vapor deposition (PECVD) system. After this treatment, the microstructural, electrical, and optical properties of IZO films were observed and reported. The result showed that the IZO/PET films was fabricated at the lowest resistivity ( 2.83 × 10 − 3 Ω · cm ), while the optical characterization displayed the maximum transmittance of 95% in the visible region with a smooth morphology and good crystalline structured, affected by the 300 W of plasma power with the optimum carrier concentration ( 4.93 × 10 21 c m − 3 ) and hall mobility (42.12 cm2/V·sec), respectively. The luminance properties and the EL efficiency were also investigated and shown a 300 W highest point of plasma power with 84 cd/m2 and 0.924 lm/W. The film properties were found responsible for producing and improving the performance of IZO/PET substrate, suitable for displaying the devices.

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Physical Properties of Sputtered Indium-doped ZnO Films Deposited on Flexible Transparent Substrates

Cited by 13 publications

References 28 publications

Flexible transparent heteroepitaxial conducting oxide with mobility exceeding 100 cm2 V−1 s−1 at room temperature

Flexible transparent heteroepitaxial conducting oxide with mobility exceeding 100 cm2 V−1 s−1 at room temperature

A Bibliometric Analysis of the Publications on In Doped ZnO to be a Guide for Future Studies

High Performance of IZO Coated on PET Substrate for Electroluminescence Device Using Oxygen Plasma Treatment

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