Flexible transparent heteroepitaxial conducting oxide with mobility exceeding 100 cm2 V−1 s−1 at room temperature

Abstract

Flexible and transparent applications have become an emerging technology and have shifted to the forefront of materials science research in recent years. Transparent conductive oxide films have been applied for flat panel displays, solar cells, and transparent glass coatings. However, none of them can fulfill the requirements for advanced transparent flexible devices, such as high-frequency applications. Here, we present a promising technique for transparent flexible conducting oxide heteroepitaxial films: the direct fabrication of epitaxial molybdenum-doped indium oxide (IMO) thin films on a transparent flexible muscovite substrate. An n-type epitaxial IMO film is demonstrated with a mobility of 109 cm2 V−1 s−1, a figure of merit of 0.0976 Ω−1, a resistivity of 4.5 × 10−5 Ω cm and an average optical transmittance of 81.8% in the visible regime. This heteroepitaxial system not only exhibits excellent electrical and optical performance but also shows excellent mechanical durability. Our results illustrate that this is an outstanding way to fabricate transparent and flexible conducting elements for the evolution and expansion of next-generation smart devices.

Transparent Conducting Amorphous IZO Thin Films: An Approach to Improve the Transparent Electrode Quality

“…All this causes a continuous search for new materials with properties close to those of the “perfect” TE [ 10 , 11 , 12 ] as well as ways to enhance the functional characteristics of already known TCO materials [ 13 , 14 , 15 ].…”

A Green Approach for High Oxidation Resistance, Flexible Transparent Conductive Films Based on Reduced Graphene Oxide and Copper Nanowires

“…Tin-doped indium oxide (ITO) is currently the most popular material for TCFs due to its excellent transmittance (T ≈ 90% @ 550 nm) and low sheet resistance (R sh ≈ 20 Ω/sq) [10]. However, ITO possesses some drawbacks, such as brittleness, the rising cost of indium (increased by more than 80% to 240 USD/kilogram from 2020 to 2022, according to TRADING ECONOMICS [11]), and the requirement for high vacuum during deposition, which limit its applications in large-scale flexible optoelectronic devices [12]. In this regard, various materials, such as carbon nanotubes (CNTs) [13,14], graphene-based materials [15,16], conducting polymers [17,18], and metal nanowires [19][20][21][22], have been proposed as substitutes for ITO to achieve flexible devices with better performance.…”

Flexible La0.67Sr0.33MnO3:ZnO Nanocomposite Thin Films Integrated on Mica

“…Recently, fluorophlogopite mica (F-mica) has been considered as an ideal flexible substrate for the high-temperature process because of its high melting point (1,300 °C), cleavable layered structure, and ultrasmooth surface . Various complex oxide thin films have been demonstrated on mica with high film quality, such as La 0.7 Sr 0.3 MnO 3 , Pr 0.5 Ca 0.5 MnO 3 , and BiFeO 3 (Fan et al, 2019;Zhang et al, 2019;Ma et al, 2020;Yen et al, 2020;Hou et al, 2021), as well as several nanocomposite thin films of La 0.67 Sr 0.33 MnO 3 :NiO (Huang et al, 2020), BaTiO 3 :Cu , and BiFeO 3 : CoFe 2 O 4 (Amrillah et al, 2017).…”