10 kV SiC BJTs — Static, switching and reliability characteristics

Sundaresan, Siddarth; Jeliazkov, Stoyan; Grummel, Brian; Singh, Ranbir

doi:10.1109/ispsd.2013.6694409

Cited by 16 publications

(6 citation statements)

References 6 publications

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“…Whereas the on-resistance increases from 201 mΩ•cm² at 25°C to 500 mΩ•cm² at 150°C. These values are far from the record-breaking βs published in literature, like βMax = 75 for a 10 kV SiC SJT [9], βMax=28 for a 10 kV SiC BJT [20], βMax=139 for a 15 kV single cell SiC BJT [21] and βMax=139 for a 21 kV single cell SiC BJT [22]. The record for highest beta (β = 256 and β = 335 for (0001) and (000-1) crystal orientations respectively) is held by Miyake et al [23], but the base layer is so thin that the open base break down voltage is limited to 600 V, which is far targeted voltage for MVDC and HVDC applications.…”

Section: Resultscontrasting

confidence: 56%

“…Repetitive switching tests and stress tests may be carried out in the future to investigate the potential bipolar degradation phenomenon. Other papers in literature report outstanding switching performance [9], [20]. Nevertheless, comparing the actual BJTs and Darlingtons with the devices from literature would not be fair as the device in [9] performs only in unipolar mode and the device in [20] is tested only at 2 kV and 30 A/cm 2 .…”

Section: Resultsmentioning

confidence: 99%

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Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Asllani

Bevilacqua

Morel

et al. 2020

MSF

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This paper reports the device design, fabrication and characterisation of 10 kV-class Bipolar Junction Transistor (BJT). Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington configurations. The static and switching characteristics of the resulting devices have been measured. The BJTs (2.4mm² active area) show a specific on-resistance as low as 198 mΩ·cm² at 100 A/cm² and room temperature for a βMax of 9.6, whereas the same active area Darlington beats the unipolar limit with a specific on-resistance of 102 mΩ·cm² at 200 A/cm² (β=11) for a βMax of 69. Double pulse tests reveal state of the art switching with very sharp dV/dt and di/dt. Turn-on is operated at less than 100 ns for an EON lower than 4mJ, whereas the turn-off takes longer times due to tail current resulting in EOFF of 17.2 mJ and 50 mJ for the single BJT and Darlington respectively when operated at high current density. Excellent parallelisation have been achieved.

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Section: Resultscontrasting

confidence: 56%

Section: Resultsmentioning

confidence: 99%

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Asllani

Bevilacqua

Morel

et al. 2020

MSF

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“…Fabrication of BJTs by 4H-SiC also enables increasing the voltage level to significantly higher values, as the leakage current is reduced and therefore the natural bipolar multiplication of BJT does not occur prematurely [8]. This expands the safe operating area (SOA) which is normally limited by the secondary breakdown [9].…”

Section: Introductionmentioning

confidence: 99%

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

Jahdi

Hedayati

Stark

et al. 2020

IEEE Trans. Ind. Electron.

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This paper reports the application of silicon BJT modelling techniques to the modelling of dynamic behaviour of high-voltage 4H-SiC BJTs, and the experimental validation thereof. High voltage silicon BJTs are impractical due to their low current gain which requires a bulky base driver. Emergence of high voltage 4H-SiC vertical NPN BJTs with a tenfold higher gain enables the application of efficient drivers, with ratings close to those of IGBTs. This paper demonstrates the advantages offered by 4H-SiC BJTs by means of wide-scale measurements at 800 V and 10 A in a range of temperatures up to 175 • C and adjusted base driver switching rates. The paper shows that the turn-off storage delay in the SiC BJT is two orders of magnitude lower than that of the silicon device. It also shows that the turn-on switching transients of SiC device are by an order of magnitude and the turn-off transients are by two orders of magnitude faster than that of its silicon counterpart, resulting in a tenfold reduction of the switching energy. It also demonstrates the temperaturedependency of switching transients of the silicon BJT, and the relative temperature-invariance of the SiC device's performance. The paper concludes with validation of the transient models for the 4H-SiC NPN BJT, showing that the model is sufficiently accurate for transient switching and loss calculations.

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“…Besides, gaining lower onresistance results in lower loss which is as important as improving the breakdown voltage to its theoretical value. Several termination techniques have been developed and optimized to approach the ideal breakdown voltage and improve the termination efficiency [1][2][3][4][5][6][7][8][9][10][11][12]. Among them, implantation-free devices with low R ON have the advantage of preventing life-time-killing defects and current degradation caused by ion implantation [10].…”

Section: Introductionmentioning

confidence: 99%

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

Elahipanah

Salemi

Zetterling

et al. 2015

IEEE Electron Device Lett.

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PostprintThis is the accepted version of a paper published in IEEE Electron Device Letters. This paper has been peer-reviewed but does not include the final publisher proof-corrections or journal pagination.Citation for the original published paper (version of record):Elahipanah, H., Salemi, A., Zetterling, C-M., Östling, M. (2015) 5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension. IEEE Electron Device Letters IndexTerms-4H-SiC, multiple-shallow-trench JTE, implantation-free, high-voltage BJT.

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10 kV SiC BJTs — Static, switching and reliability characteristics

Cited by 16 publications

References 6 publications

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

The Impact of Temperature and Switching Rate on Dynamic Transients of High-Voltage Silicon and 4H-SiC NPN BJTs: A Technology Evaluation

5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension

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