2020
DOI: 10.4028/www.scientific.net/msf.1004.923
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Static and Switching Characteristics of 10 kV-Class Silicon Carbide Bipolar Junction Transistors and Darlingtons

Abstract: This paper reports the device design, fabrication and characterisation of 10 kV-class Bipolar Junction Transistor (BJT). Manufactured devices have been packaged in single BJT, two paralleled BJTs and Darlington configurations. The static and switching characteristics of the resulting devices have been measured. The BJTs (2.4mm² active area) show a specific on-resistance as low as 198 mΩ·cm² at 100 A/cm² and room temperature for a βMax of 9.6, whereas the same active area Darlington beats the unipolar limit wit… Show more

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