2006 European Conference on Optical Communications 2006
DOI: 10.1109/ecoc.2006.4801160
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10 Gbit/s Drop and Continue Colorless Operation of a 1.5¿m AlGalnAs Reflective Amplified Electroabsorption Modulator

Abstract: AlGalnAs large spectral range EAM has been integrated with SOA using Single Active Layer technology. The device operates as a 1OGbit/s drop & continue colorless element in a 50nm spectral range up 60°C

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Cited by 13 publications
(12 citation statements)
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“…In both branches of the ONU, each one dedicated to one of two wavelengths as in [6], a reflective modulator performs the desired task of either detection or modulation. These basic functionalities have been particularly demonstrated for RSOA and SOA/REAM devices [16,20]. A tandem configuration of such components inside the ONU permits either dual-operability or dynamic bandwidth partitioning functionalities in broadband access networks, as will now be explained.…”
Section: Integration Of Higher Layer Functionalities At the Physimentioning
confidence: 99%
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“…In both branches of the ONU, each one dedicated to one of two wavelengths as in [6], a reflective modulator performs the desired task of either detection or modulation. These basic functionalities have been particularly demonstrated for RSOA and SOA/REAM devices [16,20]. A tandem configuration of such components inside the ONU permits either dual-operability or dynamic bandwidth partitioning functionalities in broadband access networks, as will now be explained.…”
Section: Integration Of Higher Layer Functionalities At the Physimentioning
confidence: 99%
“…Figure 2(e) shows the received upstream signals for RX1 at the OLT in the case of such an operator change. As can be seen, by monitoring the relative difference ∆ in the received optical signal, which is up to 30 dB [20], a switch of the operator can be deduced and the transmitters of the OLT reconfigured as described earlier. As a partial conclusion, though this kind of signaling was not implemented in this work, the proposed scheme is in principle settled just at the physical layer and does not require higher layer functionalities.…”
Section: (D)mentioning
confidence: 99%
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“…EAMs have also been investigated as they provide fast switching time. However, the wavelength-dependent optical losses limit the spectral operation range, and more complex structures are needed, which require the integration of EAM and SOA into a single chip [12]. The large optical bandwidth, high extinction ratio, high gain, and fast switching time make SOA more suitable candidates.…”
Section: Introductionmentioning
confidence: 99%
“…However, they suffer from high-temperature sensitivity, high insertion losses as well as a limited spectral operation range. Manuscript Therefore, more complex structures are needed such as reflective electro-absorption modulator SOA (REAM-SOA) [5]. The integration of passive and active photonic devices into a single chip looks like a promising approach to drive down the cost and reduce the footprint.…”
Section: Introductionmentioning
confidence: 99%