1/<i>f</i>noise in Langmuir–Blodgett films on silicon

Malik, Syed Abdul; Ray, Asim K.; Bruce, Sally S.

doi:10.1088/0268-1242/20/5/022

Cited by 15 publications

(7 citation statements)

References 31 publications

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“…The noise current decreases at a higher frequency and increases at a larger reverse bias due to the larger dark current. The device shows small noise currents of o1 pA Hz À 1/2 , which is about one order of magnitude smaller than that of a silicon diode 30 . The NEP of the photodetector is calculated to be 4.6 Â 10 À 12 W at 550 nm ( À 100 mV, 3 kHz) and 4.2 Â 10 À 12 W at 700 nm ( À 100 mV, 3 kHz).…”

Section: Resultsmentioning

confidence: 84%

Solution-processed hybrid perovskite photodetectors with high detectivity

et al. 2014

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Photodetectors capture optical signals with a wide range of incident photon flux density and convert them to electrical signals instantaneously. They have many important applications including imaging, optical communication, remote control, chemical/biological sensing and so on. Currently, GaN, Si and InGaAs photodetectors are used in commercially available products. Here we demonstrate a novel solution-processed photodetector based on an organic-inorganic hybrid perovskite material. Operating at room temperature, the photodetectors exhibit a large detectivity (the ability to detect weak signals) approaching 10 14 Jones, a linear dynamic range over 100 decibels (dB) and a fast photoresponse with 3-dB bandwidth up to 3 MHz. The performance is significantly better than most of the organic, quantum dot and hybrid photodetectors reported so far; and is comparable, or even better than, the traditional inorganic semiconductor-based photodetectors. Our results indicate that with proper device interface design, perovskite materials are promising candidates for low-cost, high-performance photodetectors.

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Section: Resultsmentioning

confidence: 84%

Solution-processed hybrid perovskite photodetectors with high detectivity

et al. 2014

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“…It is noteworthy that the device shows low noise currents of <2 pA Hz –1/2 , which is smaller than that of a silicon diode (ca. 10 pA Hz –1/2 ) …”

Section: Resultsmentioning

confidence: 99%

Solution-Processed Graphene Quantum Dot Deep-UV Photodetectors

et al. 2015

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Fast-response and high-sensitivity deep-ultraviolet (DUV) photodetectors with detection wavelength shorter than 320 nm are in high demand due to their potential applications in diverse fields. However, the fabrication processes of DUV detectors based on traditional semiconductor thin films are complicated and costly. Here we report a high-performance DUV photodetector based on graphene quantum dots (GQDs) fabricated via a facile solution process. The devices are capable of detecting DUV light with wavelength as short as 254 nm. With the aid of an asymmetric electrode structure, the device performance could be significantly improved. An on/off ratio of ∼6000 under 254 nm illumination at a relatively weak light intensity of 42 μW cm(-2) is achieved. The devices also exhibit excellent stability and reproducibility with a fast response speed. Given the solution-processing capability of the devices and extraordinary properties of GQDs, the use of GQDs will open up unique opportunities for future high-performance, low-cost DUV photodetectors.

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“…The increase in the performance was mostly attributed to the very low dark noise of 2 pA Hz -1/2 which is comparable to silicon diodes. [95] On the other hand, the photovoltage rise and fall time under 254 nm (42 µW cm -2 ) was determined as fast as 64 ms and 43 ms, respectively ( Figure 4d). One performance limiting factor of the utilized GQDs of the deep UV photodetector is the IQE of only 6%.…”

Section: Graphene Quantum Dot-based Photodetectorsmentioning

confidence: 93%

Carbon Photodetectors: The Versatility of Carbon Allotropes

Richter

Heumüller

Matt

et al. 2016

Advanced Energy Materials

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Carbon‐based organic electronics are a technology, with the potential of complementing and substituting opto‐electronic devices based on inorganic semiconductors and metals. In the group of organic semiconductors, carbon allotropes come with outstanding opto‐electric properties and are remarkable candidates for novel applications like printed electronics via solution‐processing on mechanically flexible, robust and light weight substrates, while reducing the environmental impact. Carbon allotropes like fullerenes, graphene quantum dots (GQD), carbon nanotubes (CNT), graphene and also diamond are especially interesting for photodetectors due to their tunable bandgap, high absorption coefficients and high charge carrier mobilites. These unique opto‐electric properties of the allotropes, which strongly depend on their molecular dimensionality (0D, 1D, 2D and 3D), allow each allotrope to be used in a preferential range. Hence, relying on the intrinsic properties of carbon allotropes or by hybridization, carbon‐based photodetectors are built for a spectral bandwidth, reaching from gamma‐rays to THz radiation. This review highlights the recent advances in photodetectors based on fullerenes, GQDs, CNTs, graphene and diamond, with the focus on room temperature‐operated devices. The versatility of multi‐dimensional carbon allotropes is outstanding, and promising results outline the maturing of all carbon‐based photodetection across the technologically relevant wavelengths.

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1/fnoise in Langmuir–Blodgett films on silicon

Cited by 15 publications

References 31 publications

Solution-processed hybrid perovskite photodetectors with high detectivity

Solution-processed hybrid perovskite photodetectors with high detectivity

Solution-Processed Graphene Quantum Dot Deep-UV Photodetectors

Carbon Photodetectors: The Versatility of Carbon Allotropes

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