Solution-processed hybrid perovskite photodetectors with high detectivity

Dou, Letian; Yang, Yang Micheal; You, Jingbi; Hong, Ziruo; Chang, Wei; Li, Gang; Yang, Yang

doi:10.1038/ncomms6404

Cited by 2,355 publications

(2,056 citation statements)

References 31 publications

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“…65 However, the first low noise MHP photodiodes were reported in 2015 almost at the same time by four research groups, [66][67][68][69] and the reason behind this relatively long delay is important: metal halide perovskites were initially deployed in metal oxide mesoporous scaffolds, which are not suitable for photodetection due to their large capacitances. Planar junctions became more common in 2014, 70 however solution processing of these junctions was not an easy task.…”

Section: Metal Halide Perovskite Photodetectorsmentioning

confidence: 99%

Solution-processed semiconductors for next-generation photodetectors

et al. 2017

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Section: Metal Halide Perovskite Photodetectorsmentioning

confidence: 99%

Solution-processed semiconductors for next-generation photodetectors

et al. 2017

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“…Several types of photodetectors based on photoconductors, photodiodes and phototransistors with broadband absorption [125][126][127][128][129] and tunable narrowband absorption 5,130 in the visible have been demonstrated, both being interesting features for sensitized photo-FETs.…”

Section: Ideal Sensitizer Characteristicsmentioning

confidence: 99%

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

2016

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The large diversity of applications in our daily lives that rely on photodetection Photodetectors are one of the key components in many optoelectronic devices which transduce optical into electrical information. Today, photodetectors have reached a mature technology level and address a huge application spectrum including imaging, remote sensing, fibre-optic communication and spectroscopy among many others. However, to tackle challenges and to surpass existing limitations in sensitivity of state-of-the-art photodetector systems, new device architectures and material systems are needed which offer low-cost fabrication and high performance over a wide spectral range. The active research field on photodetection grows and many novel nanostructured material systems 1 have been employed for light sensing including Quantum dots 2,3 , Perovskites 4,5 , organic molecules and polymers 6,7 , Carbon Nanotubes 8,9 , Graphene 10,11 and the large field of semiconducting 2D materials such as the transition metal dichalcogenides (TMDCs) and black phosphorus 12,13 .Photodetector performance is governed by both the optical and electronic properties of the employed semiconductor. The former determines the spectral coverage and quantum efficiency of the detector whereas the latter determines, through the carrier transport and carrier density, the amount of dark current flowing through the device, as well as the efficiency of charge separation and collection upon illumination. The key parameters for a strong signal response are a high photon to electron conversion rate (quantum efficiency) and ideally an inherent gain 3 mechanism, which yields multiple carriers per absorbed photon. The response signal is then weighed against the noise portion of the ratio, which has to be minimized for maximum sensitivity. There are several device-external noise sources, such as the photon noise due to the statistical arrival of photons on the device or the read-out noise in photodetector arrays that originates in preamplifier electronics. Here, we will put emphasis on the device (photodetector pixel) inherent noise, which stems partially from thermally generated charge carriers and also from the intrinsic carrier density that contribute to the dark current of the device (shot noise limit) as well as flicker noise (1/f). It is however important to note that the sensitivity of a detector with inherent noise lower than the noise floor of commercially used CMOS read-out circuits, typically met in photodiodes, is limited by the latter, thus a photodetector technology with an inherent gain mechanism is desired to alleviate this effect.The relevant performance metrics and terminology used throughout this article are described in Box 1. Box 1 -Performance metrics for photodetection Responsivity [A/W]The fundamental process behind photodetection is absorption of light. Responsivity R, a measure of output current per incoming optical power in units of A/W, describes how a detector system responds to illumination. Responsivity depends on the incident...

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“…Organic–inorganic halide perovskites (CH 3 NH 3 PbX 3 where X = Cl, Br, I) have recently emerged as one of the most promising materials for photovoltaics with certified power conversion efficiencies exceeding 20.1% 1, 2, 3, 4, 5, 6, 7, 8. This outstanding performance can be traced to their long carrier lifetimes, long diffusion length, and low trap densities 9, 10, 11, 12.…”

Section: Introductionmentioning

confidence: 99%

Periodic Organic–Inorganic Halide Perovskite Microplatelet Arrays on Silicon Substrates for Room‐Temperature Lasing

et al. 2016

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Organic–inorganic metal halide perovskites have recently demonstrated outstanding efficiencies in photovoltaics as well as highly promising performances for a wide range of optoelectronic applications such as lasing, light emission, optical detectors, and even for radiation detection. Key to the realization of functional perovskite micro/nanosystems on the ubiquitous silicon optoelectronics platform is through sophisticated lithography. Despite the rapid progress made in halide perovskite lasing, direct lithographic patterning of perovskite films to form optical cavities on conventional substrates remains extremely challenging. This study realizes room‐temperature high‐quality factor whispering‐gallery‐mode lasing (Q ≈ 1210) from patterned lead halide perovskite microplatelets fabricated in periodic arrays on silicon substrate with micropatterned BN film as the buffer layer. By varying the size of the platelets, modal selectivity for single mode lasing can be achieved with different cavity sizes or by simply breaking the structural symmetry of the cavity through designing the pattern. Importantly, this work demonstrates a straightforward, versatile bottom‐up scalable strategy to realize high‐quality periodic perovskite arrays with variable cavity sizes for large‐area light‐emitting and optical gain applications.

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Solution-processed hybrid perovskite photodetectors with high detectivity

Cited by 2,355 publications

References 31 publications

Solution-processed semiconductors for next-generation photodetectors

Solution-processed semiconductors for next-generation photodetectors

Photo-FETs: Phototransistors Enabled by 2D and 0D Nanomaterials

Periodic Organic–Inorganic Halide Perovskite Microplatelet Arrays on Silicon Substrates for Room‐Temperature Lasing

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