1.8 million transistor CMOS ASIC fabricated in a SiGe BiCMOS technology

Johnson, Rob; Zierak, M.; Outama, K.B.; Bahn, T.C.; Joseph, A.J.; Cordero, C.N.; Malinowski, J.; Weeks, T. W.; Milliken, R.A.; Medve, T.J.; May, G.; Chong, Weisheng; Chau, B.B.; Nelson, Mike; Harame, D.L.

doi:10.1109/iedm.1998.746330

Cited by 14 publications

(8 citation statements)

References 2 publications

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“…By combining high-speed HBTs with CMOS VLSI, SiGe BiCMOS technology can meet both highperformance and low-power requirements. So far it has been necessary to use many technologies for one system, for example GaAs for power amplifiers, low-noise amplifiers and other rf components but Si CMOS VLSI for the base band operations [5]. GaAs is being replaced by SiGe devices in several applications.…”

Section: Importance Of Sige Strained Layers and Hbtsmentioning

confidence: 99%

“…It is also important for reducing the cost and increasing the range of applications of the SiGe devices. Circuits involving 4000 to 1.8 million SiGe HBTs have been manufactured [5,6]. As discussed later in this review, SiGe BiCMOS technology is as reliable as Si technology.…”

Section: Importance Of Sige Strained Layers and Hbtsmentioning

confidence: 99%

“…Since the densities of states are known (see section 4.4), the ratio µ ⊥n (SiGe)/µ(Si) is easily determined from the intercept values. The values of the ratio of the mobilities determined in this manner are shown in figure 19 5 . For base doping of 5 × 10 17 -5 × 10 18 cm −3 the perpendicular mobility has increased by 30-40%.…”

Section: Experimental Values Of Carrier Mobilitiesmentioning

confidence: 99%

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SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

Jain

Decoutere

Willander

et al. 2001

Semicond. Sci. Technol.

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Section: Importance Of Sige Strained Layers and Hbtsmentioning

confidence: 99%

Section: Importance Of Sige Strained Layers and Hbtsmentioning

confidence: 99%

Section: Experimental Values Of Carrier Mobilitiesmentioning

confidence: 99%

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SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

Jain

Decoutere

Willander

et al. 2001

Semicond. Sci. Technol.

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“…We start with the discussion of the design and technology of fabrication of the HBTs [18][19][20][21][22] in the next section, i.e. section 2.…”

Section: Introductionmentioning

confidence: 99%

SiGe HBT for application in BiCMOS technology: II. Design, technology and performance

Jain

Decoutere

Willander

et al. 2001

Semicond. Sci. Technol.

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SiGe technology has acquired great importance in recent years. Recent advances made in the SiGe HBT technology for analogue applications are discussed in this two-part review paper. Strain, stability, reliability, mobility of charge carriers, bandgap narrowing and effective density of states of SiGe layers have been discussed in part I. This paper (part II) is devoted to the HBTs: their design and performance. The two designs of the HBTs developed by IBM and by Daimler-Benz are discussed. Their relative merits and constraints imposed by the stability criterion on each design are described. The technology used for implementing the two designs is also described. The dc and ac characteristics and Ge profiles needed to optimize different figures of merit are discussed in detail. The parasitic barriers created by outdiffusion of B and also on operating the HBT at high current densities are explained. High injection barriers can be suppressed by a special design of the Ge profiles. Introduction of C in the base suppresses outdiffusion of B. HBTs with SiGeC base layers are discussed. Issues involved in simultaneous optimization of f T , f max and BV CEO are addressed. Values of f T , f max and BV CEO of high-performance HBTs are compiled and given in a table. The noise characteristics of the SiGe HBTs are far superior to those of III-V devices. Noise in SiGe HBTs is discussed in detail. Finally, a summary of selected circuits that have been fabricated using SiGe HBTs is given.

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“…Recently SiGe BiCMOS has emerged as a viable technology for RF single chip solutions in wireless communication products [1]. However, inaccuracies and variations in thin film and thick film resistor deposition typically result in 10% to 20% variation from the designed resistor values [2] while best case poly-SiGe resistance variations have been reported at 7.2% [3].…”

Section: Introductionmentioning

confidence: 99%

Precision electrical trimming of very low TCR poly-SiGe resistors

Babcock

Francis

Bashir

et al. 2000

IEEE Electron Device Lett.

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Abstract-Precision electrical trimming of stacked Si/SiGe polycrystalline resistors available from the extrinsic base structure of a SiGe BiCMOS technology has been demonstrated for the first time. It is shown that pulse current trimming techniques can be used to trim the poly-SiGe resistors by up to 50% from their original values with accuracy better than 0.5%. The temperature coefficient of resistance (TCR) is shown to be linearly proportional to the percent change in electrically trimmed poly-SiGe resistance. Finally, we demonstrate resistance cycling using an electrical trim/recovery sequence, indicating that the technique is reversible and is governed by dopant segregation/diffusion mechanisms. The results are consistent with those obtained on conventional polysilicon resistors suggesting that the introduction of a strained SiGe layer does not adversely affect the electrical trim properties of these resistors.

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1.8 million transistor CMOS ASIC fabricated in a SiGe BiCMOS technology

Cited by 14 publications

References 2 publications

SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

SiGe HBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

SiGe HBT for application in BiCMOS technology: II. Design, technology and performance

Precision electrical trimming of very low TCR poly-SiGe resistors

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