1.50 [micro sign]m CW operation of GaInNAs∕GaAs laser diodes grown by MOCVD

Yokozeki, Mikihiro; Mitomo, Jugo; Sato, Yuusuke; Hino, T.; Narui, Hironobu

doi:10.1049/el:20045616

Cited by 10 publications

(3 citation statements)

References 8 publications

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“…Introduction: Recently, several reports have illustrated the promise of dilute nitride, GaAs-based lasers with continuous-wave (CW) operation near 1.5 mm [1][2][3]. However, to adequately address the needs of long-haul fibre transmission, the output wavelength of such devices must be further red-shifted, and we recently reported pulsed operation of GaInNAsSb laser diodes at 1532 nm [4].I nt h i sL e t t e rw ep r e s e n t results of GaInNAsSb=GaNAs double quantum well lasers with record CW lasing wavelength of 1553 nm at room temperature.…”

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confidence: 99%

Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 [micro sign]m

et al. 2005

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Access and use of this website and the material on it are subject to the Terms and Conditions set forth at Room-temperature continuous-wave opertation of GaInNAsSb laser diodes at 1.55μm Gupta, J. A.; Barrios, P. J.; Zhang, X.; Lapointe, J.; Poitras, D.; Pakulski, G.; Wu, X.; Delâge, A.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=fr L'accès à ce site Web et l'utilisation de son contenu sont assujettis aux conditions présentées dans le site LISEZ CES CONDITIONS ATTENTIVEMENT AVANT D'UTILISER CE SITE WEB. NRC Publications Record / Notice d'Archives des publications de CNRC:http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744226&lang=en http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/ctrl?action=rtdoc&an=12744226&lang=fr READ THESE TERMS AND CONDITIONS CAREFULLY BEFORE USING THIS WEBSITE.http://nparc.cisti-icist.nrc-cnrc.gc.ca/npsi/jsp/nparc_cp.jsp?lang=en Vous avez des questions? Nous pouvons vous aider. Pour communiquer directement avec un auteur, consultez la première page de la revue dans laquelle son article a été publié afin de trouver ses coordonnées. Si vous n'arrivez pas à les repérer, communiquez avec nous à PublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. Questions? Contact the NRC Publications Archive team atPublicationsArchive-ArchivesPublications@nrc-cnrc.gc.ca. If you wish to email the authors directly, please see the first page of the publication for their contact information. NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10. 1049/el:20052712 Electronics Letters, 41, 19, pp. 1060Letters, 41, 19, pp. -1062Letters, 41, 19, pp. , 2005 Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 lm J.A. Gupta, P.J. Barrios, X. Zhang, J. Lapointe, D. Poitras, G. Pakulski, X. Wu and A. DelâgeThe first 1.55 mm room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb=GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3 Â 589 mm device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70 C.Introduction: Recently, several reports have illustrated the promise of dilute nitride, GaAs-based lasers with continuous-wave (CW) operation near 1.5 mm [1-3]. However, to adequately address the needs of long-haul fibre transmission, the output wavelength of such devices must be further red-sh...

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Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 [micro sign]m

et al. 2005

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“…For 1300-nm emission wavelengths, diode lasers with active regions of highly strained InGaAsN quantum wells (QWs) [1], GaAsSb QWs [2,3], InAs quantum dots [4] and InGaAs-GaAsSb type-II QWs [5] have been demonstrated. However, in the 1550-nm regime, these methods encounter great difficulties in terms of wavelength limitation and device performance degradation [6,7]. To overcome this problem, a dilute-nitride type-II InGaAs-GaAsSb QW structure was proposed [8,9] for achieving 1550-nm on GaAs, as shown in the schematic band diagram in Fig.…”

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Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells

Yeh

Mawst

Khandekar

et al. 2006

Journal of Crystal Growth

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“…[3][4][5] Recently, we proposed a novel approach with an InGaAsN-GaAsSb type II quantum well ͑QW͒ active region for realizing GaAs-based diode lasers with emission wavelengths beyond = 1500 nm. 6 This novel approach utilizes the type II band alignment between InGaAsN and GaAsSb.…”

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Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells

Yeh¹,

Mawst²,

Khandekar³

et al. 2006

Applied Physics Letters

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Low temperature ͑30 K͒ long wavelength photoluminescence emission ͑ = 1400-1600 nm͒ from metalorganic chemical vapor deposition grown InGaAsN-GaAsSb type II "W" quantum wells ͑QWs͒, on GaAs substrates has been demonstrated. Thin layers ͑2-3 nm͒ and high antimony-content ͑30%͒ GaAsSb were utilized in this study for realizing satisfactory wave function overlap and long wavelength emission. Tensile strained GaAsP barriers effectively improve the material structural and luminescence properties of the compressive strained active region. Room temperature photoluminescence data show that the type-II QW design is a promising candidate for realizing long wavelength GaAs-based diode lasers beyond 1500 nm.

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1.50 [micro sign]m CW operation of GaInNAs∕GaAs laser diodes grown by MOCVD

Cited by 10 publications

References 8 publications

Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 [micro sign]m

Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 [micro sign]m

Characteristics of InGaAsN-GaAsSb type-II “W” quantum wells

Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells

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