Long wavelength emission of InGaAsN∕GaAsSb type II “W” quantum wells

Abstract

Low temperature ͑30 K͒ long wavelength photoluminescence emission ͑ = 1400-1600 nm͒ from metalorganic chemical vapor deposition grown InGaAsN-GaAsSb type II "W" quantum wells ͑QWs͒, on GaAs substrates has been demonstrated. Thin layers ͑2-3 nm͒ and high antimony-content ͑30%͒ GaAsSb were utilized in this study for realizing satisfactory wave function overlap and long wavelength emission. Tensile strained GaAsP barriers effectively improve the material structural and luminescence properties of the compressive strained active region. Room temperature photoluminescence data show that the type-II QW design is a promising candidate for realizing long wavelength GaAs-based diode lasers beyond 1500 nm.

GaAs1−xBix/GaNyAs1−y type-II quantum wells: novel strain-balanced heterostructures for GaAs-based near- and mid-infrared photonics

“…The performance of near- and mid-infrared light-emitting devices is limited by intrinsic issues, such as Auger recombination, carrier leakage and optical losses, associated with the conventional InP and GaSb (or InAs) material platforms upon which they are based. As a result, there has been a proliferation of approaches to developing long-wavelength light-emitting devices on GaAs over the past two decades, including quantum dots 1 (QDs) and type-II 2 3 4 5 , metamorphic 6 7 and dilute nitride 8 9 10 11 12 (containing nitrogen, N) quantum wells (QWs). This has been motivated by the superior properties of GaAs, as well as the potential to exploit vertical-cavity architectures.…”

High‐brightness long‐wavelength semiconductor disk lasers

“…The inclusion of the higher concentrations of nitrogen required for longer wavelength operation leads to a dramatic reduction in PL efficiency, however, due to an increased defect density and phase separation during growth. A number of approaches have been investigated to alleviate problems of phase separation: optimisation of the growth parameters [73,74]; reduction in the barrier band gap at the expense of carrier confinement and temperature sensitivity by incorporating nitrogen in these layers [75]; insertion layers inside superlattice structures [76] which require a very precise growth; the use of type-II QW structures [77,78]; and the incorporation of antimony as a surfactant to favour 2D growth with a high nitrogen content [79][80][81]. Thus, QW emission from dilute nitride semiconductors has been pushed well into the Cband at 1550 nm and looks set to be research topic of great interest in the coming years.…”

Effects of Ga- and Sb-precursor chemistry on the alloy composition in pseudomorphically strained GaAs1−ySby films grown via metalorganic vapor phase epitaxy

“…x Ga 1Àx As 1Àz N z layers have resulted in photoluminescence (PL) emission wavelengths between 1.4 and 1.6 mm [11][12][13][14]. The PL emission wavelengths and efficiency of these type-II structures can be extended by increasing the Sbmole fraction in the GaAs 1Ày Sb y layers.…”