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NRC Publications Archive Archives des publications du CNRCThis publication could be one of several versions: author's original, accepted manuscript or the publisher's version. / La version de cette publication peut être l'une des suivantes : la version prépublication de l'auteur, la version acceptée du manuscrit ou la version de l'éditeur. For the publisher's version, please access the DOI link below./ Pour consulter la version de l'éditeur, utilisez le lien DOI ci-dessous.http://doi.org/10. 1049/el:20052712 Electronics Letters, 41, 19, pp. 1060Letters, 41, 19, pp. -1062Letters, 41, 19, pp. , 2005 Room-temperature continuous-wave operation of GaInNAsSb laser diodes at 1.55 lm J.A. Gupta, P.J. Barrios, X. Zhang, J. Lapointe, D. Poitras, G. Pakulski, X. Wu and A. DelâgeThe first 1.55 mm room-temperature continuous-wave (CW) operation of GaAs-based laser diodes utilising GaInNAsSb=GaNAs double quantum well active regions grown by molecular beam epitaxy is reported. In electrically-pumped CW operation the narrow ridge waveguide devices have a room temperature lasing wavelength of 1550 nm near threshold, increasing to 1553 nm at thermal rollover. The CW threshold current was 132 mA for a 3 Â 589 mm device, with a characteristic temperature of 83 K, measured in pulsed mode between 20 and 70 C.Introduction: Recently, several reports have illustrated the promise of dilute nitride, GaAs-based lasers with continuous-wave (CW) operation near 1.5 mm [1-3]. However, to adequately address the needs of long-haul fibre transmission, the output wavelength of such devices must be further red-sh...