Предложена и отработана технология эпитаксиального роста тонких пленок иридата стронция Sr2IrO4 и гетероструктур Sr2IrO4/YBa2Cu3O7-delta, содержащих купратный сверхпроводник. Показано, что рост двухслойной структуры происходит эпитаксиально, а слой купратного сверхпроводника имеет ту же критическую температуру, что и автономная пленка (~ 91 K). Кристаллографические параметры полученных пленок иридата близки к табличным значениям, температурные зависимости сопротивления тонких пленок согласуются с литературными данными. DOI: 10.21883/PJTF.2017.12.44705.16704
The technology of obtaining structured thin films of strontium iridates of the compositions SrIrO3 and Sr2IrO4 by direct current cathode sputtering is presented. Both compositions were synthesized using the stoichiometric target Sr2IrO4, only the technological parameters varied. The composition of the resulting films was determined by the operating pressure and temperature. The electrophysical and structural properties of the obtained dielectric Sr2IrO4 and "metallic" SrIrO3 films are discussed. The dielectric series is compared with Sr2IrO4 films obtained by laser ablation previously.
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