The technology of obtaining structured thin films of strontium iridates of the compositions SrIrO3 and Sr2IrO4 by direct current cathode sputtering is presented. Both compositions were synthesized using the stoichiometric target Sr2IrO4, only the technological parameters varied. The composition of the resulting films was determined by the operating pressure and temperature. The electrophysical and structural properties of the obtained dielectric Sr2IrO4 and "metallic" SrIrO3 films are discussed. The dielectric series is compared with Sr2IrO4 films obtained by laser ablation previously.
The structural and electrophysical properties of epitaxial thin films of strontium iridate Sr2IrO4, which were obtained by laser ablation, have been studied. Data on the effect of deposition modes on the electrophysical properties of films are presented. Electronic transport models are discussed. Keywords: strontium iris, band conductivity, hopping conductivity.
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